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Taiwan Semiconductor Corporation 정류기-싱글

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Taiwan Semiconductor Corporation
기록 5,388
페이지 37/180
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
S1JLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
7,632
Automotive, AEC-Q101
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1ALHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
6,156
Automotive, AEC-Q101
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1BLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
4,644
Automotive, AEC-Q101
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1DLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
3,906
Automotive, AEC-Q101
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1DLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
2,160
Automotive, AEC-Q101
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1GLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
8,298
Automotive, AEC-Q101
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1JLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
3,582
Automotive, AEC-Q101
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
SR004HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 500MA DO204AL
6,462
Automotive, AEC-Q101
Schottky
40V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR002 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 500MA DO204AL
5,364
-
Schottky
20V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR003 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 500MA DO204AL
5,418
-
Schottky
30V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR004 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 500MA DO204AL
6,354
-
Schottky
40V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
TSS70U RGG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 70V 70MA 0603
2,178
-
Schottky
70V
70mA
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 25V
2pF @ 0V, 1MHz
Surface Mount
0201 (0603 Metric)
0603
-65°C ~ 125°C
2A07GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO204AC
3,924
Automotive, AEC-Q101
Standard
-
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A02GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO204AC
2,700
Automotive, AEC-Q101
Standard
100V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A03GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
3,276
Automotive, AEC-Q101
Standard
200V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
S1MFS MXG
Taiwan Semiconductor Corporation
DIODE, 1A, 1000V, SOD-128
5,184
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 1000V
9pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
S1MFSHMXG
Taiwan Semiconductor Corporation
DIODE, 1A, 1000V, AEC-Q101, SOD-
2,754
Automotive, AEC-Q101
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 1000V
9pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
F1T4G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A TS-1
5,418
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
F1T5G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A TS-1
5,670
-
Standard
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SR109HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A DO204AL
7,920
Automotive, AEC-Q101
Schottky
90V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SR109HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A DO204AL
8,748
Automotive, AEC-Q101
Schottky
90V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
S1DLS RQG
Taiwan Semiconductor Corporation
DIODE, 1.2A, 200V, SOD-123HE
5,652
-
Standard
200V
1.2A
1.3V @ 1.2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 175°C
S1GLS RQG
Taiwan Semiconductor Corporation
DIODE, 1.2A, 400V, SOD-123HE
7,182
-
Standard
400V
1.2A
1.3V @ 1.2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 175°C
2A06G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
5,544
-
Standard
800V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
RSFGLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
8,028
Automotive, AEC-Q101
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
5,364
Automotive, AEC-Q101
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFJLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
3,294
Automotive, AEC-Q101
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFJLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
4,734
Automotive, AEC-Q101
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
8,802
Automotive, AEC-Q101
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
8,604
Automotive, AEC-Q101
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C