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Taiwan Semiconductor Corporation 정류기-싱글

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Taiwan Semiconductor Corporation
기록 5,388
페이지 61/180
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
HER206G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
3,816
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
ES1BHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AC
8,946
Automotive, AEC-Q101
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1CHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
6,696
Automotive, AEC-Q101
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1DHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
8,046
Automotive, AEC-Q101
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1FHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A DO214AC
2,430
Automotive, AEC-Q101
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SRT110HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A TS-1
7,614
Automotive, AEC-Q101
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SS215L RUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A SUB SMA
5,400
-
Schottky
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HER204G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO204AC
8,406
-
Standard
300V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
S1AB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AA
8,136
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1BB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AA
6,912
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1DB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
2,322
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1DBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
8,154
Automotive, AEC-Q101
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1GB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AA
6,534
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1GBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AA
4,428
Automotive, AEC-Q101
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1JB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
3,654
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1JBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
3,456
Automotive, AEC-Q101
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1KB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AA
2,232
-
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1KBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AA
6,858
Automotive, AEC-Q101
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1MB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A DO214AA
8,100
-
Standard
-
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1MBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A DO214AA
8,694
Automotive, AEC-Q101
Standard
-
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S2KHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO214AA
7,632
Automotive, AEC-Q101
Standard
800V
2A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 800V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S2MHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO214AA
3,418
Automotive, AEC-Q101
Standard
-
2A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 1000V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS2A R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AA
3,258
-
Standard
50V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS2B R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
8,748
-
Standard
100V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS2D R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
6,138
-
Standard
200V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK29AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A DO214AC
4,050
Automotive, AEC-Q101
Schottky
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1ALHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
7,470
Automotive, AEC-Q101
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1CLHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A SUB SMA
7,164
Automotive, AEC-Q101
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HER205G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
2,952
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER206G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
8,460
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C