4th generation SiC power MOSFETs customized for the next generation of electric vehicle traction inverters

     ST introduces its fourth-generation STPOWER Silicon Carbide (SiC) MOSFET technology. Generation 4 technology sets new standards in power efficiency, power density and durability. The new technology is tailored specifically for traction inverters, an important component of electric vehicle (EV) powertrains, while also meeting the requirements of the automotive and industrial markets. The company plans to implement more complex SiC technology developments through 2027 to focus on innovation.

     As the global leader in SiC power MOSFETs, ST is advancing innovation to take advantage of the superior efficiency and enhanced power density of SiC relative to silicon devices. The current generation of SiC devices is designed to enhance future EV traction inverter platforms, including size and energy efficiency improvements. Despite the expanding electric vehicle market, there are still obstacles to mainstream adoption, prompting manufacturers to focus on producing more economical electric vehicles.

     The 800V electric vehicle bus drive system using silicon carbide helps speed up charging and reduce vehicle weight, allowing manufacturers to produce luxury versions with longer driving ranges. ST's latest SiC MOSFET devices, available in 750V and 1200V grades, will improve the energy efficiency and performance of 400V and 800V EV bus traction inverters, extending the benefits of SiC to mid-size and compact electric vehicles, a key area to drive mass market adoption. The latest generation of silicon carbide technology is suitable for numerous high-power industrial applications, such as solar inverters, energy storage systems and data centers, significantly improving the energy efficiency of these expanding uses.

     ST has completed the qualification of its fourth-generation SiC technology platform for Class 750V and expects to complete the qualification of class 1200V in the first quarter of 2025. Devices with nominal voltage ratings of 750V and 1200V will soon be available, enabling designers to meet a wide range of applications from traditional AC line voltages to high-voltage EV batteries and chargers. The fifth-generation ST SiC power devices will feature a new high power density technology that utilizes a planar structure. At the same time, ST is advancing a breakthrough that ensures superior on-resistance RDS(on) values at high temperatures, while further reducing RDS(on) values relative to current SiC technology.