Diodes introduces a pair of dual N-channel enhanced MOSFETs DMN2014LHAB and DMN2011UFX

     Diodes Inc. introduces a pair of dual N-channel enhanced MOSFETs DMN2014LHAB and DMN2011UFX to provide a compact bidirectional low loss switch for battery charging circuits. The target end markets for the new products include single-cell and dual-cell lithium battery chargers used in portable products such as smartphones, tablets, cameras and media players.

     DMN2014LHAB and DMN2011UFX are equipped with MOSFETs for dual common drain, which can drive bidirectional current charging or working use after starting. After shutdown, the battery is protected by preventing overcharging or excessive leakage current. The DMN2014LHAB and DMN2011UFX have a breakdown voltage rating of 20V and are equipped with low on-resistors of less than 13mΩ and 9.5 Mω, respectively, to reduce battery power consumption under normal operation. Peak currents of up to 80A enable the switch to easily resolve short circuits before the protection circuit is activated, and low gate threshold voltages of less than 1V ensure that the device can operate properly at drive voltages as low as 1.8V.

     The DMN2014LHAB comes in a 2mm x 3mm DFN2030 micro-package and the DMN2011UFX comes in 2mm x 5mm DFN2050, providing designers with a compact solution that takes advantage of the space saved to store additional cells and increase battery capacity.