Infineon Technologies uses the controllable reverse conduction IGBT

     Infineon Technologies AG has released a 6.5kV power module with a controlled inverse conduction IGBT that integrates an IGBT and a continuous diode on the same chip. The newly released RCDC (Diode-controlled Inverse Conduction IGBT) IGBT chip is ideal for modern high-speed trains and high-performance electric locomotives, as well as future HVDC transmission systems and transmissions. Compared to previous modules of the same mounting size, the module with the RCDC IGBT has a 33% increase in current density and improved thermal performance. As a result, it extends product service life and increases reliability, thereby minimizing system maintenance efforts.

     With the introduction of the RCDC IGBT chip, Infineon further expands its range of high-performance 6.5kV KE3 IGBT products. The chip's current density can be improved because the effective silicon area of both forward and reverse currents is increased, giving designers the flexibility to increase the system output power without the cost of increasing the form factor. Alternatively, taking advantage of its higher power density, it is possible to reduce the number of IGBTs in parallel while maintaining the same power, thereby reducing system size, product weight, and cost.

     Infineon's RCDC IGBT, in an industry-standard size IHVA highly insulated package, makes it easy to replace existing products. In addition to helping to increase power density, monolithic integration of the IGBT and diode can also significantly improve the diode I2T value, as well as the IGBT and diode thermal resistance (Rth/Zth). Low thermal resistance ensures good thermal performance over the entire operating temperature range. Lower actual junction temperature (Tvj) ripple for longer device life and, when using diode gate control, allows designers to optimize overall efficiency by weighing on-off losses against switching losses.