MACOM introduces the fourth generation of 100W silicon based GaN broadband transistor

     MACOM, a leading provider of high-performance analog RF, microwave, and optical semiconductor products, today announced the new MAGX-100027-100C0P, a wideband transistor optimized for DC-2.7GHz operation with the start of a proprietary fourth-generation gallium nitride process using built-in (gallium nitride on silicon) silicon. This gallium nitride HEMT silicon D-mode transistor is ideal for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications, and VHF/UHF/L/S band radar.

     The MAGX-100027-100C0P supports CW, pulsed, and linear operation with output power up to 100 watts (50 dBm). With an operating voltage of 50 V, the device provides 18.3 dB gain for continuous operation at 2.45GHz, while achieving a drain efficiency of 70%. For pulse operation, the MAGX-100027-100C0P boasts 18.4 dB gain at 2.7 GHz and 71% drain efficiency. This 100% RF tested transistor is in an industry-standard plastic package that gobbles up flanges.

     The positioning of fourth-generation gallium nitride (GEN4 GaN) breaks down the last technical and commercial barriers to mainstream gallium nitride adoption by providing performance that rivals expensive gallium nitride on silicon carbide (Gallium nitride in SiC) at a lower expected mass production cost structure than the current LDMOS technology. GEN4 gallium nitride provides a peak efficiency of greater than 70% and a gain of 19 dB for modulated signals at 2.7 gigahertz, which is similar to GaN's technology for SiC, and more than 10 percentage points more efficient than LDMOS. It also provides a power density greater than four times that of LDMOS.

     "This GEN4 gallium nitride transistor delivers the best performance for customers," said Gary Lopez, Product Manager, MACOM. "The MAGX-100027-100C0P is the ideal candidate for customer support for demanding applications and experiences provided by MACOM's gallium nitride solutions. The GEN4 gallium nitride product expanded earlier in the Si Gallium nitride, which has demonstrated clear, field-proven reliability under harsh environmental conditions over a five-year track of innovation and commercialization."