Navitas Semiconductor has announced its new portfolio of Gen-3 ‘Fast’ (G3F)

     Navitas Semiconductor announced the launch of the new GEN3 "Fast" (G3F) 650V and 1200v SiC MOSFETs portfolio, optimized for the fastest switching speeds, highest efficiency and higher power density. Suitable for applications such as AI data center power, obc, fast electric vehicle roadside superchargers and solar /ESS. The broad product portfolio covers industry-standard packages from D2PAK-7 to TO-247-4 and is designed for demanding, high-power, high-reliability applications.

     The G3F series is optimized for high-speed switching performance, providing a 40% improvement in hard switching FOMs compared to competitors in CCM TPPFC systems. This will increase the power of the next generation AI power supply to 10kW and from 30 kW to 100-120 kW per rack.

     These MOSFETs are developed using proprietary "grooved auxiliary plane" technology that delivers superior performance to grooved MOSFETs, while also offering superior robustness, manufacturability and cost compared to competitors. With high efficiency and high-speed performance, MOSFETs can reduce chassis temperature by 25 ° C and extend service life by up to 3 times compared to SiC products from other suppliers.

     The "grooved auxiliary plane" technology enables extremely low RDS(ON) growth with temperature, resulting in the lowest power loss over the entire operating range and up to 20% lower RDS(ON) in actual operation at high temperatures compared to competitors.

     In addition, all GeneSiC MOSFETs feature the highest 100% test avalanche capability, a 30% longer short-circuit withstand time, and a compact threshold voltage distribution that is easy to parallel, making GeneSiC MOSFETs ideal for high-power, fast-to-market applications.

     The company's latest 4.5kW high power density AI Server PSU reference design features a CRPS185 form factor, showcasing a 650v rated 40mOhms G3F field effect tube for interlaced CCM TP PFC topology. In addition to the LLC-stage GaNSafe Power ic, it achieves a power density of 138W/inch3 and a peak efficiency of more than 97%, easily achieving the "Titanium Plus" efficiency standard now enforced in Europe.

     For the electric vehicle market, the 1200 v /34 mOhm (G3F34MT12K) G3F field effectors enable Navitas' new 22kW, 800V bidirectional OBC and 3KW DC-DC converters to achieve exceptional power density of 3.5 kw /L and peak efficiency of 95.5%.

     Dr. Sid Sundaresan, Senior vice president of SiC Technology and Operations, said, "The G3F sets a new standard for efficient, cold-run SiC performance while providing high reliability and robustness for high-power, high-stress systems. "We are pushing the limits of SiC with switching speeds up to 600kHz and hard switching performance 40% better than the competition."