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Power Integrations has introduced a new addition to the InnoMux-2 series

11월 14 2024 2024-11 Power Power Integrations
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Power Integrations has introduced a new member of its InnoMux-2 family of single-stage, independently regulated multi-output offline power supply ICs. The new device features the industry's first 1700V GaN switch, fabricated using the company's proprietary PowiGaN technology. The 1700V rating further advances the state-of-the-art for GaN power devices, previously set by its own 900V and 1250V devices, launched in 2023.

     Power Integrations has introduced a new member of the InnoMux-2 family, a single-stage, independently tuned multi-output off-line power ic. The new device features the industry's first, 1700V GaN switch and is manufactured using the company's proprietary PowiGaN technology. The 1700V rating further raises the technological level of gallium nitride power devices, previously set by 900V and 1250V devices introduced in 2023.

     The new IC easily supports 1000VDC nominal input voltage in flyback configuration, achieving over 90% efficiency in applications that require one, two or three supply voltages. Each output is adjusted within 1% accuracy, eliminating the post-regulator and increasing system efficiency by about 10%. This new device replaces expensive SiC transistors in power applications such as car chargers, solar inverters, three-phase meters, and various industrial power systems.

     Radu Barsan, Vice President of Technology at Power Integrations, said: "Our rapidly evolving GaN has delivered three world-class voltage classes in less than two years: 900V, 1250V and now 1700V. Our new InnoMux-2 integrated circuit combines the 1700V GaN with three other recent innovations: independent, precise, multi-output regulation; FluxLink, our Secondary Side regulation (SSR) digital isolation communication technology; Zero voltage switching (ZVS) eliminates the need for active clamping and virtually eliminates switching losses."

     Ezgi Dogmus, Compound Semiconductor Business Manager at Yole Group, said: "The 1700V voltage rating is much higher than any other commercial GaN HEMT we know of. "The market for power GaN devices is expected to reach $2 billion within a decade, expanding into a variety of applications with potentially more attractive cost advantages than SiC."

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