STMicroelectronics introduces the new M-Series 650V IGBT

     STMicroelectronics introduces the new M-Series 650V IGBT to provide power designers with a faster and more economical energy efficiency solution. Suitable for HVAC motor drives, uninterruptible power supplies, solar converters, and all hard-switching circuit topologies for 20kHz power conversion applications.

     Using ST's third generation trench-gate field-stop low loss manufacturing process, the M-Series IGBT has a new trench gate and specially designed P-N-P vertical structure, which can find the best balance between on-off loss and on-off loss. Thus, the overall performance of the transistor can be greatly improved. Minimum short-circuit withstand time of 6µs at an initial high junction temperature of 150°C, maximum junction temperature of 175°C and wide safe operating range help extend the service life of components while increasing reliability in applications with high power dissipation requirements.

     In addition, the package of the new product also integrates a new generation of Free-wheeling diodes. The new diode provides fast recovery capabilities while maintaining a low forward voltage drop and high recovery softness. This design not only enables excellent EMI protection, but also effectively reduces switching losses. The positive VCE(sat) temperature coefficient, combined with the tight parameter distribution, enables the new product to be safely paralleled and meet the requirements of higher power.