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STMicroelectronics launches MDmesh V power MOSFET transistor breaking world record

1월 1 2012 2012-01 Semiconductors STMicroelectronics
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STMicroelectronics introduces MDmesh V power MOSFET transistor that breaks world record for high voltage power MOSFET transistor. The MDmesh V series is already the highest performing power MOSFET transistor on the market, with the lowest on-state resistance per unit area for the highest energy efficiency and power density in rated 650V applications

     STMicroelectronics, a leading global semiconductor supplier across multiple electronic applications, introduces the MDmesh V power MOSFET transistor that breaks the world record for high voltage power MOSFET transistors. The MDmesh V series is already the highest performing power MOSFET transistor on the market, with the lowest on-state resistance per unit area for the highest energy efficiency and power density in rated 650V applications.

     Now the launch of the new product has increased important energy efficiency indicators by more than 23%, for the loss of energy in the form of heat in the system power conversion circuit, such as electronic lighting controllers, consumer electronics power supplies and solar photovoltaic converters, the successful launch of the new product is a giant leap in the field of energy saving technology.
Maurizio Giudice, Market Director for Power Transistors at ST, said: "The new record underscores and strengthens ST's leadership position in the superjunction MOSFET market. The MDmesh V embodies ST's latest market-proven Multi-Drain Mesh technology, and the improved performance of the new product enables customers to reduce application design energy consumption. This reinforces ST's commitment to delivering environmentally responsible products while providing customers with superior performance through innovative product design."

     The new product STW88N65M5 MDmesh V MOSFET has only 0.029Ω on-state resistance, which is the lowest on-state resistance in the standard TO-247 package 650V market, breaking the original industry benchmark of 0.038Ω, also created by MDmesh V devices. Design engineers can directly replace MOSFETs with higher on-state resistance to improve end-application energy efficiency, or parallel fewer MOSFET transistors, thereby reducing package size and material (BOM) costs.

     St's 650V STW88N65M5 and other MDmesh V products offer a higher margin of safety than its 600V competitors, increasing the MOSFETs' ability to withstand common surges on AC power lines.

     St's market-proven MDmesh V products are available in a variety of packages, including the Max247, TO-247, D2PAK, TO-220/FP, PowerFLAT 8x8 HV and I2PAK.

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