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Vishay introduces a new generation of MOSFET devices

5월 5 2012 2012-05 Passive Components Vishay
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Vishay Intertechnology has announced the launch of its new generation TrenchFET Gen IV Series 30V N-channel power MOSFET devices -SiRA00DP, SiRA02DP, SiRA04DP and SiSA04DN. All four devices feature a new high-density design with on-resistance as low as 1.35mΩ at 4.5V and Miller charge Qgd as low as 1.8nC in PowerPAK SO-8 and 1212-8 packages.

    Vishay Intertechnology has announced the launch of its new generation TrenchFET Gen IV Series 30V N-channel power MOSFET devices -SiRA00DP, SiRA02DP, SiRA04DP and SiSA04DN. All four devices feature a new high-density design with on-resistance as low as 1.35mΩ at 4.5V and Miller charge Qgd as low as 1.8nC in PowerPAK SO-8 and 1212-8 packages.

     The new Vishay Siliconix TrenchFET IV incorporates a number of technological improvements in silicon design, wafer fabrication and device packaging, providing many benefits to power electronics system designers. Compared to the previous generation of devices, the on-resistance product of the SiRA00DP is reduced by 60%, achieving an extremely low RDS(on) of 1.0mΩ at 10V and an industry-best on-resistance of 1.35mΩ at 4.5V. For designers, the low on-resistance of MOSFETs can achieve lower conduction losses, reduce power losses, and achieve higher efficiency.

     The TrenchFET Gen IV MOSFET uses a novel structure that enables a very high density design without significantly increasing the gate charge, overcoming this problem that often occurs on high lattice count devices. The lower total gate charge of the MOSFETs released today reduces SiRA04DP's on-resistance to gate charge product Coefficient of excellence (FOM) to 56 NC-ω at 4.5V.

     SiRA00DP, SiRA02DP and SiRA04DP increase system efficiency and reduce temperature, and are available in a 6.15mm x 5.15mm PowerPAK SO-8 package, with similar efficiency in SiSA04DN. The 3.30mm x 3.30mm PowerPAK 1212-8 package is only 1/3 of the area of the previous three devices. All devices released today have a Qgd/Qgs ratio of 0.5 or less. A lower ratio reduces the gate induced voltage, helping to prevent breakdown.

     SiRA00DP, SiRA02DP, SiRA04DP and SiSA04DN are suitable for high power density DC/DC converters, synchronous rectifier, synchronous buck converters and OR-ing applications. Typical end products include switching power supplies, Voltage regulation modules (VRMS), POL, communication brick power supplies, PCS, and servers.

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