Toshiba Semiconductor and Storage 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Toshiba Semiconductor and Storage
기록 786
페이지 24/27
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 3DP 2-7K1A |
3,258 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | ±20V | 1150pF @ 10V | - | - | - | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 40A 3DP 2-7K1A |
5,832 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 4.5V, 10V | 11mOhm @ 20A, 10V | 2.3V @ 200µA | 29nC @ 10V | ±20V | 1920pF @ 10V | - | 47W (Tc) | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A TO220SIS |
2,016 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A 8SOP |
2,880 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 4.5V, 10V | 11.3mOhm @ 10A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 2110pF @ 10V | - | 1.6W (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 16A TO-220SIS |
8,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 16A | - | 270mOhm @ 8A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 16A TO-220SIS |
5,778 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 16A (Ta) | - | 330mOhm @ 8A, 10V | 4V @ 1mA | 45nC @ 10V | - | 2600pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A TO-220SIS |
6,282 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 100mOhm @ 10A, 10V | 3.5V @ 1mA | 55nC @ 10V | ±20V | 2550pF @ 100V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A DPAK-3 |
4,842 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | ±20V | 1150pF @ 10V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A DPAK-3 |
5,940 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Ta) | 10V | 18mOhm @ 20A, 10V | 4V @ 1mA | 61nC @ 10V | ±20V | 3110pF @ 10V | - | 93W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A DPAK-3 |
4,734 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 9.7mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 1500pF @ 10V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A TO-220SIS |
7,974 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 2Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 4A TO-220SIS |
5,760 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 525V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A TO-220SIS |
8,370 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A TO-220SIS |
5,706 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A TO-220SIS |
5,850 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 2Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3.5A TO-220SIS |
7,272 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 3.5A (Ta) | 10V | 1.9Ohm @ 1.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A DPAK-3 |
6,210 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 2Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A DPAK-3 |
3,960 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A DPAK-3 |
3,114 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A DPAK-3 |
5,256 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A DPAK-3 |
8,028 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 2Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB |
3,258 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | - | 8.5mOhm @ 25A, 10V | - | 54nC @ 10V | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB |
3,348 |
|
U-MOSIV | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 50A TO-220AB |
3,924 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 50A (Tc) | - | 12mOhm @ 25A, 10V | - | 55nC @ 10V | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 50A TO-220AB |
6,534 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 5.9A VS6 |
8,208 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8nC @ 10V | ±20V | 300pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 5.3A VS6 |
8,154 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 5.3A (Ta) | 4.5V, 10V | 81mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7nC @ 10V | ±20V | 290pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6.1A VS6 |
3,240 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 60V | 6.1A (Ta) | 4.5V, 10V | 59mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | ±20V | 830pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A VS6 |
2,052 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 20mOhm @ 3A, 10V | 2.5V @ 1mA | 14nC @ 10V | ±20V | 640pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 6A VS6 |
6,786 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 20mOhm @ 3A, 4.5V | 1.2V @ 200µA | 9nC @ 5V | ±12V | 630pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |