Vishay Siliconix 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Vishay Siliconix
기록 3,936
페이지 49/132
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 500V 14.5A TO-220AB |
21,324 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14.5A (Tc) | 10V | 280mOhm @ 7.5A, 10V | 4V @ 250µA | 66nC @ 10V | ±30V | 1162pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 5.6A TO220FP |
18,792 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 5.6A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 770pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET P-CH 100V 5.2A TO220FP |
14,124 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.2A (Tc) | 10V | 600mOhm @ 3.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 600V 13A TO220AB |
18,360 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64nC @ 10V | ±30V | 1205pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 13A TO220 |
21,276 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64nC @ 10V | ±30V | 1205pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
23,016 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 700pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
12,570 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 3A TO220FP |
17,220 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 3A (Tc) | 10V | 1.5Ohm @ 1.8A, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 340pF @ 15V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 400V 5.4A TO220FP |
8,304 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.4A (Tc) | 10V | 550mOhm @ 3.2A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 1370pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET P-CH 200V 4.3A TO220FP |
19,800 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 4.3A (Tc) | 10V | 800mOhm @ 2.6A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-262 |
23,136 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-262 |
20,364 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 500V 18A TO-220FP |
16,344 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 280mOhm @ 9A, 10V | 5V @ 250µA | 76nC @ 10V | ±30V | 1500pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A D2PAK |
9,984 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 19A TO-220FP |
8,784 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92nC @ 10V | ±30V | 1640pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 800V 1.4A TO220FP |
18,168 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 1.4A (Tc) | 10V | 6.5Ohm @ 840mA, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 530pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 900V 1.2A TO220FP |
16,776 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 1.2A (Tc) | 10V | 8Ohm @ 720mA, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 490pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 800V 12A TO220AB |
6,930 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 4V @ 250µA | 88nC @ 10V | ±30V | 1670pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 900V 1.9A TO220FP |
5,940 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 1.9A (Tc) | 10V | 3.7Ohm @ 1.1A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO247AC |
5,382 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 800V 15A TO220 |
7,056 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2408pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 800V 15A TO247AC |
7,056 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2408pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
6,852 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
21,396 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A D2PAK |
16,392 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 6A TO-220AB |
22,140 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 311pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 60 V (D-S) |
20,436 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 3.9mOhm @ 20A, 10V | 2.5V @ 250µA | 90nC @ 10V | ±20V | 6100pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
17,880 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 20V 100A TO263 |
18,444 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250µA | 110nC @ 10V | ±20V | 5500pF @ 10V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CHANNEL 80V 50A TO263 |
17,556 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 4.5V, 10V | 25mOhm @ 12.5A, 10V | 2.5V @ 250µA | 137nC @ 10V | ±20V | 5350pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |