Vishay Siliconix 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Vishay Siliconix
기록 3,936
페이지 68/132
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설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 30V 12A 8SO |
2,268 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 20mOhm @ 8.3A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 490pF @ 15V | - | 2.4W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 8A 8SOIC |
5,220 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 8A (Tc) | 1.8V, 4.5V | 27mOhm @ 8A, 4.5V | 1V @ 250µA | 22nC @ 8V | ±8V | 830pF @ 10V | - | 2W (Ta), 4.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 6A 1206-8 |
7,290 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6A (Tc) | 2.5V, 4.5V | 17mOhm @ 9.9A, 4.5V | 1.5V @ 250µA | 41nC @ 10V | ±12V | 1500pF @ 10V | - | 2.5W (Ta), 6.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 100V DPAK TO-252 |
8,946 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 30V 9.5A 8-SOIC |
2,430 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 4.5V, 10V | 8.5mOhm @ 13.5A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | - | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 35A 1212-8 |
2,142 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 2.5V, 10V | 4mOhm @ 20A, 10V | 1.5V @ 250µA | 180nC @ 10V | ±12V | 5460pF @ 10V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 6.9A 1212-8 |
3,562 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 6.9A (Tc) | 6V, 10V | 195mOhm @ 2.5A, 10V | 3.5V @ 250µA | 8nC @ 10V | ±20V | 210pF @ 50V | - | 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 60V SOT-223 |
4,284 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET P-CH 20V 4.5A SC70-6 |
2,718 |
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LITTLE FOOT® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Tc) | 1.8V, 4.5V | 94mOhm @ 2.8A, 4.5V | 1V @ 250µA | 13nC @ 8V | ±8V | 355pF @ 10V | Schottky Diode (Isolated) | 1.9W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
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Vishay Siliconix |
MOSFET N-CH 20V 3.77A SOT23-3 |
5,202 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 3.77A (Ta) | 1.8V, 4.5V | 33mOhm @ 5A, 4.5V | 950mV @ 250µA | 14nC @ 4.5V | ±12V | - | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
POWER MOSFET N-CH DPAK TO-252 |
6,066 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A TO252AA |
8,046 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 35A POWERPAK1212 |
6,642 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 3.3mOhm @ 10A, 10V | 2.3V @ 250µA | 102nC @ 10V | ±20V | 3065pF @ 15V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 20A POWERPAKSO-8 |
5,238 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.2V @ 250µA | 27nC @ 10V | ±20V | 985pF @ 15V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 500V 3A TO251 IPAK |
4,824 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 3.2Ohm @ 2.5A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 175pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CHANNEL 500V 3A IPAK |
3,960 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 3.2Ohm @ 1.5A, 10V | 4.5V @ 250µA | 12nC @ 10V | ±30V | 177pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
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Vishay Siliconix |
MOSFET N-CH 500V DPAK TO-252 |
8,388 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 500V DPAK TO-252 |
5,958 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CHANNEL 30V 7.8A 6TSOP |
7,038 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7.8A (Tc) | 4.5V, 10V | 35mOhm @ 6A, 10V | 2.5V @ 250µA | 10nC @ 10V | ±20V | 370pF @ 15V | - | 4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 25V 60A POWERPAK1212 |
6,750 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 1.52mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | +20V, -16V | 3640pF @ 10V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET N-CH 500V 3A TO251 IPAK |
3,708 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 3.2Ohm @ 2.5A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 175pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
8,514 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 35A 1212-8 |
3,526 |
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SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.6V @ 250µA | 43nC @ 10V | ±20V | 1765pF @ 15V | - | 3.8W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 40A PPAK 8SO |
3,492 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 6.5mOhm @ 13A, 10V | 2.8V @ 250µA | 153nC @ 10V | ±25V | 4620pF @ 15V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A POWERPAK1212 |
7,236 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.3mOhm @ 15A, 10V | 2.2V @ 1mA | 66nC @ 10V | +20V, -16V | 3014pF @ 15V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 4.5A SC70-6 |
7,038 |
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LITTLE FOOT® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Tc) | 1.8V, 4.5V | 53mOhm @ 3.7A, 4.5V | 1V @ 250µA | 11.5nC @ 8V | ±8V | 400pF @ 10V | Schottky Diode (Isolated) | 1.9W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
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Vishay Siliconix |
MOSFET P-CH 8V 9A SC75-6 |
7,236 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 9A (Tc) | 1.2V, 4.5V | 58mOhm @ 5.8A, 4.5V | 1V @ 250µA | 12nC @ 5V | ±5V | 565pF @ 4V | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
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Vishay Siliconix |
MOSFET N-CH 40V 60A POWERPAKSO-8 |
4,662 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 5mOhm @ 14A, 10V | 2.5V @ 250µA | 65nC @ 10V | ±20V | 4220pF @ 20V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V POWERPAK SO-8 |
5,976 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
3,456 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |