Vishay Siliconix 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Vishay Siliconix
기록 3,936
페이지 8/132
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
21,792 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.8V @ 250µA | 90nC @ 10V | ±20V | 2900pF @ 40V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 19A DPAK |
35,754 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 19A (Tc) | 6V, 10V | 90mOhm @ 5A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1800pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
23,418 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 8V, 10V | 17mOhm @ 10A, 10V | 4.5V @ 250µA | 45nC @ 10V | ±20V | 1825pF @ 40V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8 |
26,694 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 9.6A (Ta) | 10V | 11mOhm @ 12A, 10V | 4V @ 250µA | 57nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO252 |
31,944 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 9.3mOhm @ 20A, 10V | 3V @ 250µA | 70nC @ 10V | ±20V | 2650pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 40V 30A |
24,984 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 18A, 10V | 2.5V @ 250µA | 150nC @ 10V | ±20V | 5875pF @ 20V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB |
51,774 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 11A TO-220AB |
14,928 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220AB |
14,898 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
37,926 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 55A D2PAK |
24,084 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 30A, 10V | 3V @ 250µA | 115nC @ 10V | ±20V | 3500pF @ 25V | - | 3.75W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220AB |
62,298 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 110A D2PAK |
23,526 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 9.5mOhm @ 30A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 6700pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 2.2A PPAK SO-8 |
122,802 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 2.2A (Ta) | 6V, 10V | 174mOhm @ 3.8A, 10V | 4V @ 250µA | 135nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
29,124 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 3V @ 250µA | 125nC @ 10V | ±20V | 5600pF @ 15V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO263 |
35,268 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 3.5mOhm @ 29A, 10V | 2.5V @ 250µA | 330nC @ 10V | ±20V | 14700pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB |
36,732 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 90A D2PAK |
63,492 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4.5V @ 250µA | 150nC @ 10V | ±20V | 6290pF @ 50V | - | 3.75W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 9.2A TO220AB |
24,882 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 9.2A (Ta), 53A (Tc) | 4.5V, 10V | 19.5mOhm @ 30A, 10V | 3V @ 250µA | 115nC @ 10V | ±20V | 3500pF @ 25V | - | 3.1W (Ta), 104.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 110A D2PAK |
45,864 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 3V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 3.75W (Ta), 272W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 80V 110A D2PAK |
17,652 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 110A (Tc) | 4.5V, 10V | 11.2mOhm @ 20A, 10V | 3V @ 250µA | 270nC @ 10V | ±20V | 10850pF @ 40V | - | 13.6W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
20,658 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 2600pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 40V 110A D2PAK |
5,891 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 3V @ 250µA | 350nC @ 10V | ±20V | 11200pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO247 |
41,388 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 10A, 10V | 5V @ 250µA | 76nC @ 10V | ±30V | 2942pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 9.9A TO220FP |
22,338 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9.9A (Tc) | 4V, 5V | 180mOhm @ 5.9A, 5V | 2V @ 250µA | 66nC @ 10V | ±10V | 1800pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 600V 21A D2PAK |
65,052 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 90A TO220AB |
21,792 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 9.3mOhm @ 30A, 10V | 3V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 2.4W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 500MA PWRPAK0806 |
59,862 |
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TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.5V, 4.5V | 1.25Ohm @ 300mA, 4.5V | 900mV @ 250µA | 1nC @ 4.5V | ±8V | 31pF @ 10V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 |
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Vishay Siliconix |
MOSFET N-CH 12V 500MA PWRPAK0806 |
27,066 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 500mA (Tc) | 1.2V, 4.5V | 340mOhm @ 500mA, 4.5V | 900mV @ 250µA | 0.71nC @ 4.5V | ±5V | 21pF @ 6V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 |
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Vishay Siliconix |
MOSFET P-CH 30V 5A SOT-23 |
260,340 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Tc) | 4.5V, 10V | 42mOhm @ 3.8A, 10V | 2.5V @ 250µA | 22nC @ 10V | ±20V | 705pF @ 15V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |