Vishay Semiconductor Diodes Division 트랜지스터-IGBT-모듈
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카테고리반도체 / 트랜지스터 / 트랜지스터-IGBT-모듈
제조업체Vishay Semiconductor Diodes Division
기록 138
페이지 2/5
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | IGBT 유형 | 구성 | 전압-수집기 이미 터 고장 (최대) | 전류-수집기 (Ic) (최대) | 전력-최대 | Vce (on) (최대) @ Vge, Ic | 전류-수집기 차단 (최대) | 입력 커패시턴스 (Cies) @ Vce | 입력 | NTC 서미스터 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 30A 187W MTP |
5,022 |
|
- | NPT | Three Phase Inverter | 1200V | 30A | 187W | 3.66V @ 15V, 30A | 250µA | 1.95nF @ 30V | Standard | Yes | -40°C ~ 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT |
8,118 |
|
- | - | Single | 600V | 107A | 403W | 2.49V @ 15V, 60A | 100µA | 9.5nF @ 30V | Single Phase Bridge Rectifier | Yes | 150°C (TJ) | Through Hole | 12-MTP Module | MTP |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 600V 69A 195W MTP |
5,076 |
|
- | - | Full Bridge Inverter | 600V | 69A | 195W | 3.25V @ 15V, 50A | 250µA | 5.42nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 16-MTP Module | MTP |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 600V 200A 652W SOT-227 |
2,034 |
|
- | Trench | Single | 600V | 200A | 652W | 2V @ 15V, 100A | 100µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 20A 240W MTP |
8,226 |
|
- | NPT | Full Bridge Inverter | 1200V | 20A | 240W | 4.66V @ 15V, 40A | 250µA | 3.79nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 16-MTP Module | MTP |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 40A 240W MTP |
2,556 |
|
- | NPT | Full Bridge Inverter | 1200V | 40A | 240W | 4.66V @ 15V, 40A | 250µA | 3.79nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 16-MTP Module | MTP |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 600V 96A 378W MTP |
3,490 |
|
- | - | Single | 600V | 96A | 378W | 2.15V @ 15V, 40A | 100µA | 7.43nF @ 30V | Single Phase Bridge Rectifier | Yes | 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 100A 446W INT-A-PAK |
3,526 |
|
- | - | Single | 1200V | 100A | 446W | 1.7V @ 15V, 50A (Typ) | 1mA | 4.29nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 600V 100A 347W MTP |
6,480 |
|
- | NPT | Half Bridge | 600V | 100A | 347W | 3.4V @ 15V, 140A | 700µA | 8nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 600V 121A 462W MTP |
3,546 |
|
- | - | - | 600V | 121A | 462W | 2.29V @ 15V, 60A | 100µA | 9.5nF @ 30V | Standard | Yes | 150°C (TJ) | Chassis Mount | 16-MTP Module | MTP |
|
|
|
Vishay Semiconductor Diodes Division |
TRANSISTOR INSLTED GATE BIPOLAR |
8,154 |
|
- | NPT | Single | 600V | 147A | 625W | 2.8V @ 15V, 100A | 100µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4 | SOT-227 |
|
|
|
Vishay Semiconductor Diodes Division |
TRANSISTOR INSLTED GATE BIPOLAR |
3,474 |
|
- | NPT | Single | 1200V | 149A | 862W | 3.9V @ 15V, 75A | 250µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4 | SOT-227 |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 100A 446W INT-A-PAK |
5,778 |
|
- | - | Half Bridge | 1200V | 100A | 446W | 2.15V @ 15V, 50A | 5mA | 4.29nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 100A 405W INT-A-PAK |
5,814 |
|
- | Trench | Half Bridge | 1200V | 100A | 405W | 2.35V @ 15V, 50A | 5mA | 6.24nF @ 30V | Standard | No | 175°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 22A 89W EMIPAK-2B |
6,642 |
|
- | Trench | - | 1200V | 22A | 89W | 3.03V @ 15V, 15A | 75µA | 1.07nF @ 30V | Standard | Yes | 150°C (TJ) | Chassis Mount | EMIPAK-2B | EMIPAK-2B |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 200A 658W INT-A-PAK |
4,806 |
|
- | - | Single | 1200V | 200A | 658W | 1.8V @ 15V, 100A (Typ) | 1mA | 7.43nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 650V 150A EMIPAK-2B |
5,130 |
|
- | Trench | Three Level Inverter | 650V | 142A | 417W | 2.06V @ 15V, 100A | 100µA | 6.6nF @ 30V | Standard | No | 175°C (TJ) | Chassis Mount | EMIPAK-2B | EMIPAK-2B |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 105A 500W INT-A-PAK |
4,644 |
|
- | - | Half Bridge | 1200V | 105A | 500W | 3.2V @ 15V, 75A (Typ) | 2mA | 4.3nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 600V 138A 500W INT-A-PAK |
2,124 |
|
- | NPT | Half Bridge | 600V | 138A | 500W | 3V @ 15V, 150A | 200µA | - | Standard | No | 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 200A 650W INT-A-PAK |
2,718 |
|
- | - | Half Bridge | 1200V | 200A | 650W | 2.2V @ 15V, 100A | 5mA | 7.43nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 600V 108A 390W INT-A-PAK |
8,658 |
|
- | NPT | Half Bridge | 600V | 108A | 390W | 2.85V @ 15V, 100A | 100µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 600V 109A 294W EMIPAK-2B |
2,736 |
|
- | Trench | Three Level Inverter | 600V | 109A | 294W | 1.93V @ 15V, 75A | 100µA | 4.44nF @ 30V | Standard | Yes | 175°C (TJ) | Chassis Mount | EMIPAK-2B | EMIPAK-2B |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 80A 463W MTP |
7,488 |
|
- | NPT | Half Bridge | 1200V | 80A | 463W | 4.91V @ 15V, 80A | 250µA | 8.28nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT |
3,708 |
|
- | Trench | Half Bridge | 650V | 221A | 600W | 2.12V @ 15V, 200A | 60µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
MOD IGBT 20A 500V MTP |
3,348 |
|
- | - | - | - | - | - | - | - | - | - | No | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 300A 1389W INT-A-PAK |
3,006 |
|
- | - | Single | 1200V | 300A | 1389W | 1.87V @ 15V, 150A (Typ) | 1mA | 10.6nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 600V 209A 781W INT-A-PAK |
3,546 |
|
- | NPT | Half Bridge | 600V | 209A | 781W | 2.84V @ 15V, 200A | 200µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 66A 330W ECONO |
2,700 |
|
- | - | - | 1200V | 66A | 330W | 4.5V @ 15V, 75A | 250µA | - | Standard | No | 150°C (TJ) | Chassis Mount | Module | ECONO2 4PACK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 1200V 280A 1147W INT-A-PAK |
7,200 |
|
- | - | Half Bridge | 1200V | 280A | 1147W | 3.6V @ 15V, 150A | 5mA | 12.7nF @ 30V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
|
|
|
Vishay Semiconductor Diodes Division |
IGBT 600V 85A 208W INT-A-PAK |
7,902 |
|
- | Trench | Half Bridge | 600V | 85A | 208W | 2.1V @ 15V, 50A | 1mA | 3.03nF @ 30V | Standard | No | 175°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |