Infineon Technologies 정류기-싱글
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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Infineon Technologies
기록 720
페이지 2/24
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO220-2-1 |
57,618 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 40A TO220-2 |
13,722 |
|
- | Standard | 650V | 40A | 2.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 15A TO247AC |
23,856 |
|
HEXFRED® | Standard | 600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO220-2-1 |
20,664 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO220-2 |
7,896 |
|
- | Silicon Carbide Schottky | 650V | 20A (DC) | 1.35V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 27µA @ 420V | 401pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO220-2-1 |
9,684 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 150A TO247-3 |
17,004 |
|
- | Standard | 650V | 150A (DC) | 1.7V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 108ns | 40µA @ 650V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 150A TO247-3 |
8,076 |
|
- | Standard | 600V | 150A (DC) | 2V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 40µA @ 600V | - | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTKY 650V 12A TO220-2-1 |
12,252 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247-3 |
214 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 34A TO220-2 |
307 |
|
- | Silicon Carbide Schottky | 650V | 34A (DC) | 1.35V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 53µA @ 420V | 783pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO220-2 |
7,428 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 62µA @ 1200V | 525pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTKY 650V 16A TO220-2-1 |
23,940 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1.2KV 56A TO220-2 |
14,610 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 56A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 123µA @ 1200V | 1050pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 30A TO247-3 |
63 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 220µA @ 650V | 860pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 650V 40A TO247-3 |
6,930 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 40A (DC) | 1.7V @ 40A | No Recovery Time > 500mA (Io) | 0ns | 220µA @ 650V | 1140pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 100V 250MA SOT23 |
597,582 |
|
- | Standard | 100V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 80V 200MA SC79-2 |
288,678 |
|
- | Standard | 80V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 2A TO220-2 |
24,138 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.65V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | 182pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | 175°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 600V 120A TO247-3 |
7,524 |
|
- | Standard | 600V | 120A (DC) | 2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 121ns | 40µA @ 600V | - | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3 |
252 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247-3 |
8,928 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 1200V 16A TO220-2 |
8,868 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 16A (DC) | 1.95V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 730pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247-3 |
8,136 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO220-2-1 |
17,988 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 9A (DC) | 1.7V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 650V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 8A TO220-2 |
8,328 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 8A (DC) | 1.95V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTKY 650V 20A TO220-2-1 |
10,176 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SC79-2 |
208,410 |
|
- | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
|
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Infineon Technologies |
DIODE SCHOTTKY 650V 24A TO220-2 |
1,404 |
|
- | Silicon Carbide Schottky | 650V | 24A (DC) | 1.35V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 33µA @ 420V | 495pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 650V 27A TO220-2 |
2,462 |
|
- | Silicon Carbide Schottky | 650V | 27A (DC) | 1.35V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 420V | 594pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |