Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 124/225
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
4,374 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
7,236 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
4,896 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 9.4A DPAK |
8,622 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | ±30V | 560pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 9.4A DPAK |
6,480 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | ±30V | 560pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 9.4A DPAK |
7,506 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | ±30V | 560pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 16A D2PAK |
8,028 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 1100pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 16A D2PAK |
3,492 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 1100pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 55A D2PAK |
2,430 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 16.5mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1812pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 55A D2PAK |
8,352 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 16.5mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1812pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK |
2,916 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK |
7,182 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK |
7,434 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 36A TO-220AB |
3,294 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 54A D2PAK |
6,156 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 54A D2PAK |
6,660 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 54A TO-220AB |
4,914 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 54A TO-220AB |
3,474 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 54A TO-220AB |
7,146 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 36A DPAK |
4,842 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 36A DPAK |
8,298 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 54A DPAK |
2,196 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 54A DPAK |
8,100 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 54A DPAK |
2,034 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 91A DPAK |
8,406 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 91A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 5V | ±20V | 2672pF @ 16V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 91A DPAK |
5,436 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 91A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 5V | ±20V | 2672pF @ 16V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 170A SUPER247 |
3,816 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 9mOhm @ 100A, 10V | 5V @ 250µA | 390nC @ 10V | ±30V | 6790pF @ 25V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Infineon Technologies |
MOSFET P-CH 150V 13A TO262 |
3,672 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 3.8W (Ta), 110W (Tc) | - | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET |
2,988 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | - |
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Infineon Technologies |
MOSFET P-CH 20V 4.3A MICRO8 |
4,482 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 2.5V, 4.5V | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15nC @ 5V | ±12V | 1066pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |