Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 59/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 600V 10.6A TO263 |
2,412 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32nC @ 10V | ±20V | 700pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 140A D2PAK |
7,992 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 5000pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 104A D2PAK |
7,164 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 85A (Tc) | 6V, 10V | 6.7mOhm @ 51A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4440pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 114A DIRECTFET |
2,520 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 114A (Tc) | 6V, 10V | 3.6mOhm @ 70A, 10V | 3.7V @ 150µA | 180nC @ 10V | ±20V | 6510pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME |
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Infineon Technologies |
MOSFET N-CH 150V 51A D2PAK |
6,858 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 51A (Tc) | 10V | 32mOhm @ 36A, 10V | 5V @ 250µA | 89nC @ 10V | ±30V | 2770pF @ 25V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 159A ISOMETRICMF |
4,860 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 159A (Tc) | 6V, 10V | 1.85mOhm @ 97A, 10V | 3.9V @ 100µA | 161nC @ 10V | ±20V | 5317pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MF | DirectFET™ Isometric MF |
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Infineon Technologies |
MOSFET N-CH 60V 30A TDSON-8 |
4,752 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta), 100A (Tc) | 6V, 10V | 1.6mOhm @ 50A, 10V | 2.8V @ 95µA | 71nC @ 10V | ±20V | 5200pF @ 30V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 43A D2PAK |
2,826 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 2400pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 23A D2PAK |
2,628 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 23A (Tc) | 10V | 90mOhm @ 14A, 10V | 5.5V @ 250µA | 56nC @ 10V | ±30V | 1200pF @ 25V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
7,596 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 31A D2PAK |
5,220 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | ±30V | 2370pF @ 25V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 40V 195A D2PAK-7PIN |
4,716 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7437pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET N-CH 55V 131A D2PAK |
6,336 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 5480pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 47A TO263-3 |
7,884 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 950V 14A TO252 |
7,254 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 14A (Tc) | 10V | 450mOhm @ 7.2A, 10V | 3.5V @ 360µA | 35nC @ 10V | ±20V | 1053pF @ 400V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 47A TO263-3 |
5,508 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 33mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 60V 173A D2PAK |
3,490 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210nC @ 10V | ±20V | 7020pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 100A TDSON-8 |
8,712 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 13.8A (Ta), 100A (Tc) | 4.5V, 10V | 8.2mOhm @ 100A, 10V | 2.4V @ 110µA | 104nC @ 10V | ±20V | 7400pF @ 50V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 24A D2PAK |
2,394 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | ±30V | 1960pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 25A TO263-3 |
3,528 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta), 100A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 2.8V @ 75µA | 56nC @ 10V | ±20V | 4100pF @ 30V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 104A D2PAK |
6,642 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | ±16V | 5000pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 160A D2PAK |
5,076 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 10V | 1.95mOhm @ 148A, 10V | 2.35V @ 150µA | 83nC @ 4.5V | ±20V | 8020pF @ 25V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
2,808 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.2mOhm @ 80A, 10V | 4V @ 120µA | 110nC @ 10V | ±20V | 7300pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 100A TDSON-8 |
4,842 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 18A (Ta), 100A (Tc) | 6V, 10V | 4.7mOhm @ 50A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4800pF @ 40V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 183A D2PAK |
2,700 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | ±20V | 10150pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 62A D2PAK |
8,496 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 62A (Tc) | 10V | 26mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 4600pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
7,884 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 6V, 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315nC @ 10V | ±20V | 10250pF @ 25V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 250V 25A TO263-3 |
3,528 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET NCH 650V 36A PG-HDSOP-10 |
6,426 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 190mOhm @ 4.2A, 10V | 4V @ 210µA | 18nC @ 10V | ±20V | 718pF @ 400V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
4,068 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6mOhm @ 69A, 10V | 2V @ 180µA | 150nC @ 10V | ±20V | 3800pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |