Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 60/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 100V 120A D2PAK |
2,736 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 20A HSOF-8 |
4,932 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 125mOhm @ 6.4A, 10V | 4V @ 320µA | 27nC @ 10V | ±20V | 1080pF @ 400V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 100V 300A 8HSOF |
2,196 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 300A (Tc) | 6V, 10V | 2mOhm @ 150A, 10V | 3.5V @ 272µA | 156nC @ 10V | ±20V | 11200pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8-SOIC |
4,698 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 13.5mOhm @ 10A, 10V | 1V @ 250µA | 45nC @ 10V | ±20V | 1585pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 40A TDSON-8 |
6,336 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 7.2A (Ta), 40A (Tc) | 10V | 25.2mOhm @ 20A, 10V | 4V @ 43µA | 17nC @ 10V | ±20V | 1100pF @ 50V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
5,526 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
7,074 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 50A, 10V | 2V @ 250µA | 37nC @ 10V | ±20V | 2600pF @ 20V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 60A 8TDSON |
5,670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 6V, 10V | 9.8mOhm @ 30A, 10V | 3.8V @ 36µA | 28nC @ 10V | ±20V | 2100pF @ 50V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 40A TSDSON-8 |
8,046 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta), 40A (Tc) | 6V, 10V | 9.7mOhm @ 20A, 10V | 3.8V @ 36µA | 28nC @ 10V | ±20V | 2080pF @ 50V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 13A 8-PQFN |
6,498 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 100A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | ±20V | 4340pF @ 25V | - | 3.6W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 200V 24A TDSON-8 |
3,510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 50mOhm @ 22A, 10V | 4V @ 60µA | 15nC @ 10V | ±20V | 1580pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 19A TDSON-8 |
6,516 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 19A (Ta), 100A (Tc) | 6V, 10V | 3.9mOhm @ 50A, 10V | 2.8V @ 36µA | 27nC @ 10V | ±20V | 2000pF @ 30V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 56A 8TDSON |
3,942 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 56A (Tc) | 8V, 10V | 16mOhm @ 28A, 10V | 4.6V @ 60µA | 23.1nC @ 10V | ±20V | 1820pF @ 75V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 100A 8TDSON |
4,068 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3.7mOhm @ 50A, 10V | 3.8V @ 72µA | 58nC @ 10V | ±20V | 4200pF @ 40V | - | 2.5W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 36A TDSON-8 |
5,526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | 10V | 32mOhm @ 36A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 35A 8TDSON |
4,284 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 35A (Tc) | 10V | 35mOhm @ 35A, 10V | 4V @ 90µA | 30nC @ 10V | ±20V | 2410pF @ 100V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 100A TDSON-8 |
3,258 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.5mOhm @ 50A, 10V | 3.8V @ 115µA | 87nC @ 10V | ±20V | 6500pF @ 50V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 87A TDSON-8 |
4,086 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 87A (Tc) | 8V, 10V | 9.3mOhm @ 44A, 10V | 4.6V @ 107µA | 40.7nC @ 10V | ±20V | 3230pF @ 75V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK |
5,040 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6540pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7 |
4,752 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 100A, 10V | 2.2V @ 196µA | 166nC @ 4.5V | ±20V | 28000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 162A TO-262 |
4,950 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 250V 25A TO220-3 |
4,896 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 180A TO263-7 |
2,052 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.5V @ 270µA | 206nC @ 10V | ±20V | 14200pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 120V 180A TO263-7 |
6,624 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 180A (Tc) | 10V | 3.6mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | ±20V | 13800pF @ 60V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 250V 64A TO263-3 |
8,424 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 86nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 155A 8HSOF |
7,956 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 155A (Tc) | 8V, 10V | 5.9mOhm @ 150A, 10V | 4V @ 270µA | 92nC @ 10V | ±20V | 7200pF @ 75V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 100V D2PAK-7 |
2,160 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4.1V @ 270µA | 195nC @ 10V | ±20V | 840pF @ 50V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 200V 96A HSOF-8 |
3,438 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 96A (Tc) | 10V | 11.1mOhm @ 96A, 10V | 4V @ 267µA | 87nC @ 10V | ±20V | 7000pF @ 100V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 650V 50A TO263-3 |
3,402 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH 650V 69A HSOF-8 |
5,202 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 69A (Tc) | 10V | 33mOhm @ 28.9A, 10V | 4V @ 1.44mA | 110nC @ 10V | ±20V | 5000pF @ 400V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |