ISSI, Integrated Silicon Solution Inc 기억
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카테고리반도체 / 메모리 IC / 기억
제조업체ISSI, Integrated Silicon Solution Inc
기록 4,379
페이지 64/146
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시리즈 | 메모리 유형 | 메모리 포맷 | 기술 | 메모리 크기 | 메모리 인터페이스 | 시계 주파수 | 쓰기주기 시간-단어, 페이지 | 접근 시간 | 전압-공급 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
6,210 |
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- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
7,596 |
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- | Volatile | DRAM | SDRAM - Mobile | 512Mb (32M x 16) | Parallel | 166MHz | - | 5.5ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
4,644 |
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- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
7,794 |
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- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (256M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
3,618 |
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- | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 166MHz | - | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 144LFBGA |
4,176 |
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- | Volatile | DRAM | SDRAM - DDR | 512Mb (16M x 32) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 165TFBGA |
5,436 |
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- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
3,780 |
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- | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
5,562 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (32M x 16) | Parallel | 133MHz | - | 6ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 90WBGA |
2,124 |
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- | Volatile | DRAM | SDRAM - DDR | 2Gb (64M x 32) | Parallel | 200MHz | 15ns | 5ns | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
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|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 117MHZ |
7,362 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100LQFP |
3,150 |
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- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100LQFP |
2,466 |
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- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100LQFP |
7,758 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 117MHZ |
8,046 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 117MHZ |
6,444 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 200MHZ |
2,736 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 200MHZ |
8,766 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 78TWBGA |
2,970 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (512M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (9x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 90TFBGA |
7,380 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (256K x 32) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
2,412 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 166MHz | - | 5.4ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 165TFBGA |
6,732 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 125°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48MGA |
6,408 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 20ns | 20ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 66TSOP II |
5,130 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
7,542 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 400MHZ |
8,028 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (128M x 16) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
8,406 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (32M x 16) | Parallel | 166MHz | - | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 3M PARALLEL 119PBGA |
6,678 |
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- | Volatile | SRAM | SRAM - Asynchronous | 3Mb (128K x 24) | Parallel | - | 10ns | 10ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90LFBGA |
2,862 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 64Mb (2M x 32) | Parallel | 166MHz | 15ns | 5.5ns | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
4,986 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |