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Microsemi 트랜지스터-IGBT-단일

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카테고리반도체 / 트랜지스터 / 트랜지스터-IGBT-단일
제조업체Microsemi Corporation
기록 145
페이지 4/5
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
IGBT 유형
전압-수집기 이미 터 고장 (최대)
전류-수집기 (Ic) (최대)
전류-수집기 펄스 (Icm)
Vce (on) (최대) @ Vge, Ic
전력-최대
에너지 전환
입력 유형
게이트 차지
Td (켜기 / 끄기) @ 25 ° C
테스트 조건
역 복구 시간 (trr)
작동 온도
장착 유형
패키지 / 케이스
공급자 장치 패키지
APT30GP60LDLG
Microsemi
IGBT 600V 100A 463W TO264
4,554
-
PT
600V
100A
120A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
APT50GS60BRDLG
Microsemi
IGBT 600V 93A 415W TO247
8,352
-
NPT
600V
93A
195A
3.15V @ 15V, 50A
415W
755µJ (off)
Standard
235nC
16ns/225ns
400V, 50A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT68GA60B2D40
Microsemi
IGBT 600V 121A 520W TO-247
7,290
POWER MOS 8™
PT
600V
121A
202A
2.5V @ 15V, 40A
520W
715µJ (on), 607µJ (off)
Standard
198nC
21ns/133ns
400V, 40A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT68GA60LD40
Microsemi
IGBT 600V 121A 520W TO-264
193
POWER MOS 8™
PT
600V
121A
202A
2.5V @ 15V, 40A
520W
715µJ (on), 607µJ (off)
Standard
198nC
21ns/133ns
400V, 40A, 4.7Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
APT25GP120BG
Microsemi
IGBT 1200V 69A 417W TO247
4,968
POWER MOS 7®
PT
1200V
69A
90A
3.9V @ 15V, 25A
417W
500µJ (on), 438µJ (off)
Standard
110nC
12ns/70ns
600V, 25A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT64GA90LD30
Microsemi
IGBT 900V 117A 500W TO-264
6,354
POWER MOS 8™
PT
900V
117A
193A
3.1V @ 15V, 38A
500W
1192µJ (on), 1088µJ (off)
Standard
162nC
18ns/131ns
600V, 38A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
APT40GP60SG
Microsemi
IGBT 600V 100A 543W D3PAK
2,592
POWER MOS 7®
PT
600V
100A
160A
2.7V @ 15V, 40A
543W
385µJ (on), 352µJ (off)
Standard
135nC
20ns/64ns
400V, 40A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
D3 [S]
APT70GR120L
Microsemi
IGBT 1200V 160A 961W TO264
8,190
-
NPT
1200V
160A
280A
3.2V @ 15V, 70A
961W
3.82mJ (on), 2.58mJ (off)
Standard
544nC
33ns/278ns
600V, 70A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
APT70GR120B2
Microsemi
IGBT 1200V 160A 961W TO247
8,280
-
NPT
1200V
160A
280A
3.2V @ 15V, 70A
961W
3.82mJ (on), 2.58mJ (off)
Standard
544nC
33ns/278ns
600V, 70A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT50GP60BG
Microsemi
IGBT 600V 100A 625W TO247
4,302
POWER MOS 7®
PT
600V
100A
190A
2.7V @ 15V, 50A
625W
465µJ (on), 637µJ (off)
Standard
165nC
19ns/83ns
400V, 50A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT40GP60B2DQ2G
Microsemi
IGBT 600V 100A 543W TMAX
6,210
POWER MOS 7®
PT
600V
100A
160A
2.7V @ 15V, 40A
543W
385µJ (on), 350µJ (off)
Standard
135nC
20ns/64ns
400V, 40A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT102GA60L
Microsemi
IGBT 600V 183A 780W TO264
20
-
PT
600V
183A
307A
2.5V @ 15V, 62A
780W
1.354mJ (on), 1.614mJ (off)
Standard
294nC
28ns/212ns
400V, 62A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
APT80GA90LD40
Microsemi
IGBT 900V 145A 625W TO-264
1,519
POWER MOS 8™
PT
900V
145A
239A
3.1V @ 15V, 47A
625W
1652µJ (on), 1389µJ (off)
Standard
200nC
18ns/149ns
600V, 47A, 4.7Ohm, 15V
25ns
-
Through Hole
TO-264-3, TO-264AA
TO-264
APT50GP60B2DQ2G
Microsemi
IGBT 600V 150A 625W TMAX
6,228
POWER MOS 7®
PT
600V
150A
190A
2.7V @ 15V, 50A
625W
465µJ (on), 635µJ (off)
Standard
165nC
19ns/85ns
400V, 50A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT75GN120B2G
Microsemi
IGBT 1200V 200A 833W TMAX
5,976
-
Trench Field Stop
1200V
200A
225A
2.1V @ 15V, 75A
833W
8045µJ (on), 7640µJ (off)
Standard
425nC
60ns/620ns
800V, 75A, 1Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT50GT120B2RDQ2G
Microsemi
IGBT 1200V 94A 625W TO247
5,760
Thunderbolt IGBT®
NPT
1200V
94A
150A
3.7V @ 15V, 50A
625W
2330µJ (off)
Standard
340nC
24ns/230ns
800V, 50A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
-
APT50GT120LRDQ2G
Microsemi
IGBT 1200V 106A 694W TO264
4,464
Thunderbolt IGBT®
NPT
1200V
106A
150A
3.7V @ 15V, 50A
694W
2585µJ (on), 1910µJ (off)
Standard
240nC
23ns/215ns
800V, 50A, 1Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
APT150GN60B2G
Microsemi
IGBT 600V 220A 536W SOT227
860
-
Trench Field Stop
600V
220A
450A
1.85V @ 15V, 150A
536W
8.81mJ (on), 4.295mJ (off)
Standard
970nC
44ns/430ns
400V, 150A, 1Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
-
APT35GP120B2DQ2G
Microsemi
IGBT 1200V 96A 543W TMAX
98
POWER MOS 7®
PT
1200V
96A
140A
3.9V @ 15V, 35A
543W
750µJ (on), 680µJ (off)
Standard
150nC
16ns/95ns
600V, 35A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT65GP60L2DQ2G
Microsemi
IGBT 600V 198A 833W TO264
8,838
POWER MOS 7®
PT
600V
198A
250A
2.7V @ 15V, 65A
833W
605µJ (on), 895µJ (off)
Standard
210nC
30ns/90ns
400V, 65A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
-
APT50GF120B2RG
Microsemi
IGBT 1200V 135A 781W TMAX
8,730
-
NPT
1200V
135A
150A
3V @ 15V, 50A
781W
3.6mJ (on), 2.64mJ (off)
Standard
340nC
25ns/260ns
800V, 50A, 1Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT50GT120B2RDLG
Microsemi
IGBT 1200V 106A 694W TO-247
5,760
Thunderbolt IGBT®
NPT
1200V
106A
150A
3.7V @ 15V, 50A
694W
3585µJ (on), 1910µJ (off)
Standard
240nC
23ns/215ns
800V, 50A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT150GN60LDQ4G
Microsemi
IGBT 600V 220A 536W TO-264L
8,784
-
Trench Field Stop
600V
220A
450A
1.85V @ 15V, 150A
536W
8.81mJ (on), 4.295mJ (off)
Standard
970nC
44ns/430ns
400V, 150A, 1Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
APT11GF120BRDQ1G
Microsemi
IGBT 1200V 25A 156W TO247
3,582
-
NPT
1200V
25A
24A
3V @ 15V, 8A
156W
300µJ (on), 285µJ (off)
Standard
65nC
7ns/100ns
800V, 8A, 10Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT11GF120KRG
Microsemi
IGBT 1200V 25A 156W TO220
6,408
-
NPT
1200V
25A
44A
3V @ 15V, 8A
156W
300µJ (on), 285µJ (off)
Standard
65nC
7ns/100ns
800V, 8A, 10Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220 [K]
APT11GP60BDQBG
Microsemi
IGBT 600V 41A 187W TO247
3,564
POWER MOS 7®
PT
600V
41A
45A
2.7V @ 15V, 11A
187W
46µJ (on), 90µJ (off)
Standard
40nC
7ns/29ns
400V, 11A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT13GP120KG
Microsemi
IGBT 1200V 41A 250W TO220
5,418
POWER MOS 7®
PT
1200V
41A
50A
3.9V @ 15V, 13A
250W
114µJ (on), 165µJ (off)
Standard
55nC
9ns/28ns
600V, 13A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220 [K]
APT15GN120KG
Microsemi
IGBT 1200V 45A 195W TO220
5,940
POWER MOS 7®
Trench Field Stop
1200V
45A
45A
2.1V @ 15V, 15A
195W
410µJ (on), 950µJ (off)
Standard
90nC
10ns/150ns
800V, 15A, 4.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220 [K]
APT15GP60KG
Microsemi
IGBT 600V 56A 250W TO220
4,140
POWER MOS 7®
PT
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 121µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220 [K]
APT15GP90BG
Microsemi
IGBT 900V 43A 250W TO247
2,088
POWER MOS 7®
PT
900V
43A
60A
3.9V @ 15V, 15A
250W
200µJ (off)
Standard
60nC
9ns/33ns
600V, 15A, 4.3Ohm, 15V
-
-
Through Hole
TO-247-3
TO-247 [B]