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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1112/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
SF47G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 4A DO201AD
3,400
-
Standard
500V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF47GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 4A DO201AD
6,624
Automotive, AEC-Q101
Standard
500V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF48G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
3,544
-
Standard
600V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF48GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
3,690
Automotive, AEC-Q101
Standard
600V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF61G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A DO201AD
7,812
-
Standard
50V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF61GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A DO201AD
4,626
Automotive, AEC-Q101
Standard
50V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF62G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A DO201AD
2,844
-
Standard
100V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF62GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A DO201AD
3,492
Automotive, AEC-Q101
Standard
100V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF63G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 6A DO201AD
6,336
-
Standard
150V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF63GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 6A DO201AD
8,874
Automotive, AEC-Q101
Standard
150V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF64G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A DO201AD
2,016
-
Standard
200V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF64GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A DO201AD
2,358
Automotive, AEC-Q101
Standard
200V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF65G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 6A DO201AD
3,798
-
Standard
300V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF65GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 6A DO201AD
5,526
Automotive, AEC-Q101
Standard
300V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF66G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A DO201AD
3,312
-
Standard
400V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF66GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A DO201AD
8,514
Automotive, AEC-Q101
Standard
400V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF67G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 6A DO201AD
4,176
-
Standard
500V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF67GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 6A DO201AD
3,598
Automotive, AEC-Q101
Standard
500V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF68G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A DO201AD
2,358
-
Standard
600V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF68GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A DO201AD
8,460
Automotive, AEC-Q101
Standard
600V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SK12H45 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 12A DO201AD
5,166
-
Schottky
45V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 45V
-
Through Hole
DO-201AD, Axial
DO-201AD
200°C (Max)
SK12H60 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 12A DO201AD
6,228
-
Schottky
60V
12A
700mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 60V
-
Through Hole
DO-201AD, Axial
DO-201AD
200°C (Max)
SK15H45 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 15A R-6
2,016
-
Schottky
45V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 45V
-
Through Hole
R6, Axial
R-6
200°C (Max)
SK20H45 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 20A R-6
7,938
-
Schottky
45V
20A
550mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 45V
-
Through Hole
R6, Axial
R-6
200°C (Max)
SR002 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 500MA DO204AL
8,802
-
Schottky
20V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR002HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 500MA DO204AL
8,784
Automotive, AEC-Q101
Schottky
20V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR003 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 500MA DO204AL
3,978
-
Schottky
30V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR003HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 500MA DO204AL
5,850
Automotive, AEC-Q101
Schottky
30V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR004 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 500MA DO204AL
8,118
-
Schottky
40V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR004HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 500MA DO204AL
6,804
Automotive, AEC-Q101
Schottky
40V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C