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다이오드 유형

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전압-DC 역방향 (Vr) (최대)

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전류-평균 정류 (Io)

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전압-순방향 (Vf) (최대) @ If

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속도

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역 복구 시간 (trr)

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전류-역방향 누설 @ Vr

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커패시턴스 @ Vr, F

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장착 유형

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패키지 / 케이스

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공급자 장치 패키지

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필터보기

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

기록 34,936

페이지 1109/1165

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
HER204G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC	8,838	-	Standard	300V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HER205G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	3,168	-	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HER206G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	5,598	-	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HER207G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO204AC	2,916	-	Standard	800V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HER301G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	2,718	-	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER302G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	2,358	-	Standard	100V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER303G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	4,824	-	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER304G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD	7,740	-	Standard	300V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER305G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	7,146	-	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER306G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	7,200	-	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER307G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD	8,838	-	Standard	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER308G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO201AD	8,460	-	Standard	-	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER601G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	6,030	-	Standard	50V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER603G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	5,292	-	Standard	200V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER604G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A R-6	7,938	-	Standard	300V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER605G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	8,910	-	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER606G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	4,500	-	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
MUR160 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AC	6,372	-	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
MUR160A B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	5,778	-	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
MUR160AHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	5,814	Automotive, AEC-Q101	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
MUR160HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AC	2,772	Automotive, AEC-Q101	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
MUR190 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AC	6,192	-	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
MUR190A B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AL	4,158	-	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
MUR190AHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AL	2,376	Automotive, AEC-Q101	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
MUR190HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AC	5,472	Automotive, AEC-Q101	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
MUR420 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	2,736	-	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR420HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	5,976	Automotive, AEC-Q101	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR440 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	3,024	-	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR440HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	2,394	Automotive, AEC-Q101	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR460HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	5,292	Automotive, AEC-Q101	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C

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