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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi |
DIODE GEN PURP 80V DO35 |
14,880 |
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Military, MIL-PRF-19500/403 | Standard | 80V | - | 1.1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100nA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 225V 200MA DO35 |
6,102 |
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Military, MIL-PRF-19500/118 | Standard | 225V | 200mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 200MA DO35 |
8,460 |
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Military, MIL-S-19500-241 | Standard | - | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
9,324 |
|
Military, MIL-PRF-19500/420 | Standard | 600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 30V 1A TSLP-2 |
8,262 |
|
- | Schottky | 30V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 30V | 15pF @ 5V, 1MHz | Surface Mount | SOD-882 | PG-TSLP-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 4V 110MA TSLP-2 |
6,876 |
|
- | Schottky | 4V | 110mA (DC) | 410mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 1V | 350pF @ 0V, 1MHz | Surface Mount | 2-XDFN | PG-TSLP-2-19 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 8A TO252-2 |
5,976 |
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CoolSiC™+ | Silicon Carbide Schottky | 1200V | 8A (DC) | 1.95V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 365pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHTKY 1200V 38A PGTO252-2 |
7,254 |
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CoolSiC™+ | Silicon Carbide Schottky | 1200V | 38A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 62µA @ 12V | 29pF @ 800V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 300A DO9 |
6,300 |
|
- | Standard, Reverse Polarity | 600V | 300A | 1.4V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 600V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
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IXYS |
DIODE GEN PURP 8KV 4.2A UGE |
6,138 |
|
- | Standard | 8000V | 4.2A | 6.25V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 1mA @ 8000V | - | Chassis Mount | UGE | UGE | - |
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Microsemi |
DIODE GEN PURP 600V 500A LP4 |
6,252 |
|
- | Standard | 600V | 500A | 1.8V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 2.5mA @ 600V | - | Chassis Mount | LP4 | LP4 | - |
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IXYS |
DIODE GEN PURP 600V 514A Y4-M6 |
5,724 |
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- | Standard | 600V | 514A | 1.52V @ 520A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 24mA @ 600V | - | Chassis Mount | Y4-M6 | Y4-M6 | -40°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 1.2KV 450A LP4 |
6,444 |
|
- | Standard | 1200V | 450A | 2.5V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 110ns | 2.5mA @ 1200V | - | Chassis Mount | LP4 | LP4 | - |
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IXYS |
DIODE GEN PURP 1.2KV 453A Y4-M6 |
1,804 |
|
- | Standard | 1200V | 453A | 1.96V @ 520A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 24mA @ 1200V | - | Chassis Mount | Y4-M6 | Y4-M6 | -40°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 75V 300MA DO35 |
38,136 |
|
- | Standard | 75V | 300mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA SC70-3 |
42,552 |
|
- | Standard | 100V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 200V 1A SMA |
50,004 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 200V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 50V 1A DO41 |
46,254 |
|
- | Standard | 50V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Nexperia |
DIODE GEN PURP 100V 215MA SOD123 |
26,214 |
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Automotive, AEC-Q101, BAS16 | Standard | 100V | 215mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 1.5pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 150°C (Max) |
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Comchip Technology |
DIODE GEN PURP 50V 1A DO41 |
17,052 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 400V 1A DO41 |
8,304 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 50V 4A DO201AD |
20,772 |
|
SWITCHMODE™ | Standard | 50V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 60V TO220AC |
9,468 |
|
- | Schottky | 60V | - | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 60V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 100V 15A TO220AC |
13,392 |
|
- | Schottky | 100V | 15A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 100V | 500pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 600V TO220AC |
16,296 |
|
- | Schottky | 600V | - | 2.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 150V 15A TO220AC |
21,048 |
|
- | Schottky | 150V | 15A | 860mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | 500pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 45V 20A ITO220AC |
17,256 |
|
- | Schottky | 45V | 20A | 600mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 900pF @ 5V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 10A TO220F |
14,880 |
|
- | Standard | 600V | 10A | 2.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 58ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
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WeEn Semiconductors |
DIODE GEN PURP 200V 8A TO220AC |
6,060 |
|
- | Standard | 200V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 400V 9A TO220AC |
23,460 |
|
- | Standard | 400V | 9A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |