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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 645/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXYS |
DIODE GEN PURP 1.4KV 60A TO247AD |
529 |
|
- | Standard | 1400V | 60A | 2.04V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 230ns | 200µA @ 1200V | 32pF @ 1200V, 1MHz | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 50V 1A DO213AB |
3,474 |
|
- | Schottky | 50V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | 0.9pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | - |
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|
Semtech |
DIODE GEN PURP 100V 4.5A AXIAL |
5,688 |
|
- | Standard | 100V | 4.5A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | 430pF @ 4V, 1MHz | Through Hole | Axial | Axial | - |
|
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 33A TO252-2 |
4,806 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 33A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 754pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
7,164 |
|
Military, MIL-PRF-19500/228 | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
3,906 |
|
Military, MIL-PRF-19500/228 | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A DO203AB |
341 |
|
- | Standard | 1200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
8,352 |
|
- | Standard | 100V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
6,120 |
|
- | Standard, Reverse Polarity | 100V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
IXYS |
DIODE GEN PURP 1.6KV 60A TO247AD |
8,388 |
|
- | Standard | 1600V | 60A | 2.04V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 230ns | 200µA @ 1400V | 32pF @ 1200V, 1MHz | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A TO247AC |
4,590 |
|
- | Standard | 200V | 40A | 1.25V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Semtech |
DIODE GEN PURP 200V 4.5A AXIAL |
6,228 |
|
- | Standard | 200V | 4.5A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | 250pF @ 4V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
4,590 |
|
Military, MIL-PRF-19500/427 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 95A DO203AB |
7,452 |
|
- | Standard | 1600V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 70A DO203AB |
3,150 |
|
- | Standard | 600V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
|
Semtech |
DIODE GEN PURP 400V 4.5A AXIAL |
1,934 |
|
- | Standard | 400V | 4.5A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 165pF @ 4V, 1MHz | Through Hole | Axial | Axial | - |
|
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|
ON Semiconductor |
DIODE SBD 10A 120V D2PAK-3 |
778 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Semtech |
DIODE GEN PURP 150V 3.3A AXIAL |
2,628 |
|
- | Standard | 150V | 3.3A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 600V 10A TO220FM |
3,132 |
|
- | Silicon Carbide Schottky | 600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 430pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220FM | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 95A DO203AB |
8,892 |
|
- | Standard | 1400V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 100A TO247 |
508 |
|
- | Standard | 600V | 100A | 1.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV 20A TO220-2 |
4,112 |
|
- | Silicon Carbide Schottky | 1200V | 20A | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
Littelfuse |
DIODE SIC SCHOTKY 650V 16A TO247 |
7,704 |
|
- | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 460µA @ 650V | 520pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247AD | 175°C (Max) |
|
|
|
Semtech |
D MET 1A STD 200V HR |
6,210 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Semtech |
D MET 1A STD 400V HR |
31 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Semtech |
D MET 1A STD 600V HR |
2,520 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Semtech |
D MET 1A STD 800V HR |
3,240 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 650V 8A TO220-2L |
8,910 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | 44pF @ 650V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 15A DO5 |
3,582 |
|
- | Standard, Reverse Polarity | 600V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 50V 15A DO5 |
266 |
|
- | Standard | 50V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |