트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 217/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 60V 12A POWERPAK1212 |
5,904 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Tc) | 4.5V, 10V | 21.5mOhm @ 6.1A, 10V | 2.5V @ 250µA | 41nC @ 10V | ±20V | 2021pF @ 30V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 16A POWERPAK1212 |
5,670 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 21mOhm @ 12A, 10V | 2.5V @ 250µA | 26nC @ 4.5V | ±20V | 1975pF @ 15V | - | 62.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Panasonic Electronic Components |
MOSFET N CH 33V 8A WMINI8-F1 |
5,490 |
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- | N-Channel | MOSFET (Metal Oxide) | 33V | 8A (Ta) | 4.5V, 10V | 15mOhm @ 4A, 10V | 2.5V @ 730µA | 5.1nC @ 4.5V | ±20V | 520pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | WMini8-F1 | 8-SMD, Flat Lead |
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Diodes Incorporated |
MOSFET BVDSS: 31V 40V TO252 |
7,128 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 16.8A (Ta), 70A (Tc) | 4.5V, 10V | 7.3mOhm @ 20A, 10V | 3V @ 250µA | 29.1nC @ 10V | ±20V | 1895pF @ 30V | - | 2.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V PPAK 1212-8W |
6,642 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 10.8mOhm @ 12A, 10V | 2.5V @ 250µA | 77nC @ 10V | ±20V | 4572pF @ 20V | - | 62.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8W | PowerPAK® 1212-8W |
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ON Semiconductor |
MOSFET N-CH 25V 35A TO-252AA |
5,544 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 8.5mOhm @ 35A, 10V | 2.5V @ 250µA | 29nC @ 10V | ±20V | 1440pF @ 13V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 75A LFPAK |
3,852 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 1mA | 31nC @ 10V | ±20V | 1773pF @ 25V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Rohm Semiconductor |
RQ3E100AT IS THE HIGH RELIABILIT |
7,758 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta), 31A (Tc) | 4.5V, 10V | 11.4mOhm @ 10A, 10V | 2.5V @ 1mA | 42nC @ 10V | ±20V | 1900pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 25A 1212-8 |
4,014 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 4.3mOhm @ 10A, 10V | 2.2V @ 250µA | 45nC @ 10V | +20V, -16V | 2070pF @ 15V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI506 |
2,286 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 15.5A (Ta), 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 20A, 10V | 3V @ 250µA | 29.1nC @ 10V | ±20V | 1895pF @ 30V | - | 2.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CHA 80V 9.7A SO8 |
2,160 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 9.7A (Ta) | 4.5V, 10V | 16.5mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | ±20V | 1949pF @ 40V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 9A 8-TSON |
2,340 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 9A (Ta) | 6.5V, 10V | 22mOhm @ 4.5A, 10V | 4V @ 100µA | 12nC @ 10V | ±20V | 710pF @ 30V | - | 700mW (Ta), 18W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 70V 2.6A SOT223 |
14,358 |
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- | P-Channel | MOSFET (Metal Oxide) | 70V | 2.6A (Ta) | 4.5V, 10V | 160mOhm @ 2.1A, 10V | 1V @ 250µA | 18nC @ 10V | ±20V | 635pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 55V 20.3A D2PAK |
15,828 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 20.3A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 1mA | - | ±20V | 483pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 200V 320MA SOT223 |
19,344 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 320mA (Ta) | 10V | 10Ohm @ 250mA, 10V | 3V @ 1mA | - | ±20V | 85pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 150V 50A D2PAK |
13,098 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 10V | 35mOhm @ 25A, 10V | 4V @ 1mA | 79nC @ 10V | ±20V | 4720pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-SOP ADV |
80,886 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 2.2mOhm @ 23A, 10V | 2.5V @ 1mA | 113nC @ 10V | ±20V | 4200pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 2A TO252 |
6,948 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4Ohm @ 1A, 10V | 5V @ 250µA | 9.5nC @ 10V | ±30V | 362pF @ 25V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V 30A POWERPAKSO-8 |
6,480 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 10V | 21.5mOhm @ 10A, 10V | 3.5V @ 250µA | 25nC @ 10V | ±20V | 1200pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
8,478 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 7A 8-HUML |
8,154 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 28.6mOhm @ 7A, 10V | 2V @ 250µA | 8.9nC @ 10V | ±20V | 410pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | HUML2020L8 | 8-PowerUDFN |
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ON Semiconductor |
MOSFET N-CHANNEL 40V 51A 8WDFN |
6,318 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 51A (Tc) | 4.5V, 10V | 7.3mOhm @ 10A, 10V | 2.2V @ 250µA | 7nC @ 4.5V | ±20V | 880pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Nexperia |
MOSFET N-CH 30V 70A LFPAK33 |
8,928 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 2.9mOhm @ 25A, 10V | 2.15V @ 1mA | 36.1nC @ 10V | ±20V | 2419pF @ 15V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Vishay Siliconix |
MOSFET N-CH 20V 19A 8-SOIC |
53,166 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 19A (Ta) | 2.5V, 4.5V | 2.7mOhm @ 25A, 4.5V | 1.8V @ 250µA | 55nC @ 4.5V | ±12V | 8500pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 19A 8-SOIC |
19,080 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 19A (Ta) | 2.5V, 4.5V | 2.7mOhm @ 25A, 4.5V | 1.8V @ 250µA | 55nC @ 4.5V | ±12V | 8500pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A TO252 |
2,628 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 545pF @ 25V | - | 86.2W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 10.6A 8SOIC |
8,568 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.6A (Ta) | 4.5V, 10V | 4.3mOhm @ 7.5A, 10V | 3V @ 250µA | 58.9nC @ 10V | ±20V | 4068pF @ 25V | - | 820mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 129A 8PDFN |
6,606 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 129A (Tc) | 4.5V, 10V | 3.3mOhm @ 21A, 10V | 2.5V @ 250µA | 31nC @ 10V | ±20V | 1850pF @ 15V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 3A TO252 |
5,706 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 1.4Ohm @ 900mA, 10V | 4V @ 250µA | 7.12nC @ 10V | ±30V | 257.3pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 60V 12A DPAK |
2,466 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 100mOhm @ 6A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 315pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |