트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 220/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 19A 8SOP |
3,348 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 6.2mOhm @ 9A, 10V | 2.3V @ 200µA | 17nC @ 10V | ±20V | 1400pF @ 15V | - | 1W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 500V DPAK |
7,110 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.5Ohm @ 1.25A, 10V | 5V @ 250µA | 8nC @ 10V | ±25V | 280pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET (CORRESPONDS |
6,768 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 13.3mOhm @ 10A, 10V | 2.5V @ 1mA | 20nC @ 5V | ±20V | 1070pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 9.5A DPAK |
2,682 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta), 30A (Tc) | 4.5V, 10V | 20mOhm @ 9.5A, 10V | 3V @ 250µA | 9.4nC @ 5V | ±20V | 660pF @ 15V | - | 2.8W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 10A DPAK-4 |
2,304 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta), 46A (Tc) | 4.5V, 10V | 16mOhm @ 19A, 10V | 2V @ 250µA | 29nC @ 10V | ±20V | 1400pF @ 25V | - | 3.1W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 3.2A TO-251 |
18,060 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 26A 8TSON |
6,588 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 26A (Tc) | 6.5V, 10V | 7.5mOhm @ 13A, 10V | 4V @ 200µA | 22nC @ 10V | ±20V | 1800pF @ 30V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
3,150 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 40V 50A TO252 |
3,456 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta), 50A (Tc) | 4.5V, 10V | 9.9mOhm @ 9.8A, 10V | 2.5V @ 250µA | 91nC @ 10V | ±25V | 4234pF @ 20V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
23,316 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 10V | 110mOhm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 455pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 85A TO252 |
5,274 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 85A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 76nC @ 10V | ±20V | 4400pF @ 15V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 35A DPAK |
3,544 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 11mOhm @ 35A, 10V | 2.5V @ 250µA | 25nC @ 10V | ±20V | 1220pF @ 13V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V 13A PWDI3333-8 |
2,574 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 60A (Tc) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 2V @ 250µA | 50.4nC @ 10V | ±12V | 2713pF @ 30V | - | 2.2W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CHAN 80V POWERPAK SO-8L |
7,632 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 16A (Tc) | 4.5V, 10V | 80mOhm @ 10A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±20V | 2000pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 50A ATPAK |
6,498 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 12mOhm @ 25A, 10V | - | 27nC @ 10V | ±20V | 1650pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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Vishay Siliconix |
MOSFET P-CHAN 40V POWERPAK SO-8L |
8,766 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 2.5V @ 250µA | 95nC @ 10V | ±20V | 6000pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | 8-PowerTDFN |
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Sanken |
MOSFET N-CH 40V 14A 8DFN |
8,730 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 4.5V, 10V | 5mOhm @ 35.4A, 10V | 2.5V @ 650µA | 35.3nC @ 10V | ±20V | 2410pF @ 25V | - | 3.1W (Ta), 59W (Tc) | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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Sanken |
MOSFET N-CH 60V 9A 8DFN |
6,570 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 9A (Ta) | 4.5V, 10V | 8.9mOhm @ 23.6A, 10V | 2.5V @ 650µA | 38.6nC @ 10V | ±20V | 2520pF @ 25V | - | 3.1W (Ta), 59W (Tc) | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 40V 30A ATPAK |
7,704 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 30A (Ta) | 4.5V, 10V | 25mOhm @ 15A, 10V | - | 29nC @ 10V | ±20V | 1380pF @ 20V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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ON Semiconductor |
MOSFET N-CH 800V 2A DPAK |
7,272 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6nC @ 10V | ±20V | 400pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
N-CHANNEL 600 V, 0.26 OHM TYP., |
3,006 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Tc) | 10V | 1.55Ohm @ 1.75A, 10V | 5V @ 250µA | 8.6nC @ 10V | ±30V | 375pF @ 100V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 8A 8-SOIC |
8,550 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Tc) | 4.5V, 10V | 36mOhm @ 4.6A, 10V | 2.5V @ 250µA | 32nC @ 10V | ±20V | 1100pF @ 30V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 60V 15A |
4,140 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Tc) | 4.5V, 10V | 42mOhm @ 10A, 10V | 2.5V @ 250µA | 15nC @ 10V | ±20V | 535pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
8,352 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 60V 25A ATPAK |
8,586 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta) | 4V, 10V | 43mOhm @ 13A, 10V | - | 33.5nC @ 10V | ±20V | 1450pF @ 20V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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Vishay Siliconix |
MOSFET P-CHAN 2.5V SO8 |
3,402 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 13.6A (Ta), 49A (Tc) | 2.5V, 10V | 8mOhm @ 13A, 10V | 1.4V @ 250µA | 162nC @ 10V | ±12V | 4250pF @ 15V | - | 2.7W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 25V 10.4A DPAK |
8,406 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 10.4A (Ta), 65A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.5V @ 250µA | 16.5nC @ 4.5V | ±20V | 1308pF @ 12V | - | 1.28W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 10.8A 8SOIC |
6,120 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 10.8A (Tc) | 10V | 30mOhm @ 6A, 10V | 2.5V @ 250µA | 25nC @ 10V | ±20V | 1265pF @ 15V | - | 6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 40V 100A LFPAK |
8,892 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 5V | 3.7mOhm @ 25A, 10V | 2.1V @ 1mA | 26.8nC @ 5V | ±10V | 4077pF @ 25V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N CH 600V 3.4A DPAK |
3,420 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.4A (Tc) | 10V | 2.5Ohm @ 1.7A, 10V | 5V @ 250µA | 10.8nC @ 10V | ±25V | 510pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |