트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 414/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
MOSFET N-CH 200V 5A CPT3 |
3,526 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 760mOhm @ 2.5A, 10V | 5.25V @ 1mA | 8.3nC @ 10V | ±30V | 330pF @ 25V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 8V-24V SO-8 T&R 2. |
3,582 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 5.5mOhm @ 15A, 10V | 2.5V @ 250µA | 42nC @ 10V | ±20V | 2000pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
T6 40V SG NCH U8FL |
8,118 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta), 48A (Tc) | 10V | 8.5mOhm @ 15A, 10V | 3.5V @ 30µA | 10nC @ 10V | ±20V | 625pF @ 25V | - | 3.1W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 100V 1.5A SOT23-6 |
6,678 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 6V, 10V | 250mOhm @ 3.2A, 10V | 4V @ 250µA | 7.7nC @ 10V | ±20V | 405pF @ 50V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 600V 0.9A IPAK |
6,804 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 900mA (Tc) | 10V | 12Ohm @ 450mA, 10V | 4V @ 250µA | 7.7nC @ 10V | ±30V | 215pF @ 25V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8PQFN |
4,878 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 16mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | ±20V | 560pF @ 25V | - | 2.6W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET PCH 60V 8SO |
5,868 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 110mOhm @ 4.5A, 10V | 3V @ 250µA | 19.4nC @ 10V | ±20V | 1030pF @ 30V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N CH 30V 18A 8SOIC |
4,248 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Tc) | 4.5V, 10V | 5.5mOhm @ 18A, 10V | 2.5V @ 250µA | 44.5nC @ 10V | ±20V | 2300pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 2A TO251 |
3,598 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 11nC @ 10V | ±30V | 325pF @ 25V | - | 56.8W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 2A |
6,048 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.7Ohm @ 1A, 10V | 4.5V @ 250µA | 11nC @ 10V | ±30V | 295pF @ 25V | - | 57W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET N-CH 40V 11.5A PWDI3333-8 |
3,528 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 11.5A (Ta) | 4.5V, 10V | 12mOhm @ 14A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1810pF @ 20V | - | 930mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH |
6,282 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.7Ohm @ 1A, 10V | 4.5V @ 250µA | 11nC @ 10V | ±30V | 295pF @ 25V | - | 57W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI333 |
4,338 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 50A (Tc) | 3.8V, 10V | 11mOhm @ 14.4A, 10V | 3V @ 250µA | 12nC @ 10V | ±20V | 823pF @ 15V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 30V 83A 8DFN |
5,022 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 83A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2.2V @ 250µA | 35nC @ 10V | ±20V | 1330pF @ 15V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
8,514 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 14.4A (Ta), 64.8A (Tc) | 5V, 10V | 8.8mOhm @ 10A, 10V | 3V @ 250µA | 15.3nC @ 10V | ±20V | 1088pF @ 20V | - | 2.99W (Ta), 55.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V U-DFN2020- |
8,262 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 11.6A (Ta) | 4.5V, 10V | 11.5mOhm @ 10A, 10V | 3V @ 250µA | 14.2nC @ 10V | ±20V | 1030pF @ 20V | - | 990mW (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | U-DFN2020-6 | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 13A 38A 5DFN |
5,076 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 38A (Tc) | 4.5V, 10V | 7.35mOhm @ 30A, 10V | 2.1V @ 250µA | 15.2nC @ 10V | ±20V | 770pF @ 15V | - | 2.46W (Ta), 21.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Diodes Incorporated |
MOSFETN-CHAN 30V POWERDI3333-8 |
5,904 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.5V @ 250µA | 42nC @ 10V | ±20V | 2000pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 35V 6A CPH6 |
6,822 |
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- | N-Channel | MOSFET (Metal Oxide) | 35V | 6A (Ta) | 4V, 10V | 37mOhm @ 3A, 10V | - | 10nC @ 10V | ±20V | 470pF @ 20V | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 82A 5X6 PQFN |
8,676 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 82A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.35V @ 50µA | 32nC @ 10V | ±20V | 2487pF @ 10V | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 24V 70A POWERDI3333 |
5,454 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 24V | 70A (Tc) | 2.5V, 10V | 5mOhm @ 12A, 10V | 1.45V @ 250µA | 53.7nC @ 10V | ±12V | 1683pF @ 15V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 24V 70A POWERDI3333 |
7,812 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 24V | 70A (Tc) | 2.5V, 10V | 5mOhm @ 12A, 10V | 1.45V @ 250µA | 53.7nC @ 10V | ±12V | 1683pF @ 15V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V TO252 T&R |
7,218 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 41.2A (Tc) | 6V, 10V | 23mOhm @ 20A, 10V | 4V @ 250µA | 21.4nC @ 10V | ±20V | 1544pF @ 50V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 12A LFPAK |
7,722 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 113mOhm @ 5A, 10V | 4V @ 1mA | 10.4nC @ 10V | ±20V | 601pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI33 |
3,420 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI33 |
6,228 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET P-CH 20V 7.6A |
4,176 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 7.6A (Ta) | 1.5V, 4.5V | 27mOhm @ 7A, 4.5V | 1V @ 250µA | 27nC @ 4.5V | ±8V | 1837pF @ 15V | - | 730mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 11A 8TSON-ADV |
2,934 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Tc) | 4.5V, 10V | 11mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | ±20V | 660pF @ 15V | - | 700mW (Ta), 19W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 2A 6TSOP |
8,136 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 2A (Ta) | 4.5V, 10V | 220mOhm @ 2A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | ±20V | 329pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CHANNEL 30V 27A TO252 |
8,532 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | 25mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | ±20V | 1241pF @ 15V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |