트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 452/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Rohm Semiconductor |
MOSFET N-CH 45V 20A TCPT3 |
5,688 |
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- | N-Channel | MOSFET (Metal Oxide) | 45V | 20A (Ta) | 4.5V, 10V | - | - | - | ±20V | - | - | 20W (Ta) | 150°C (TJ) | Surface Mount | TCPT3 | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 30A DPAK-3 |
4,626 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 6V, 10V | 18Ohm @ 15A, 10V | 3V @ 1mA | 28nC @ 10V | ±20V | 1350pF @ 10V | - | 58W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 35A DPAK-3 |
7,398 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta) | 6V, 10V | 10.3mOhm @ 17.5A, 10V | 3V @ 1mA | 28nC @ 10V | ±20V | 1370pF @ 10V | - | 58W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 700V 7A TO220 |
6,624 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 7A (Tc) | 10V | 1.8Ohm @ 3.5A, 10V | 4.5V @ 250µA | 25nC @ 10V | ±30V | 1175pF @ 25V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 40A 8TSON-ADV |
2,646 |
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U-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.3V @ 500µA | 40nC @ 10V | ±20V | 2230pF @ 15V | - | 700mW (Ta), 35W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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ON Semiconductor |
T6 60V NCH LL IN U8FL |
8,622 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 46A TO252 |
6,588 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 46A (Tc) | 10V | 6.8mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | ±20V | 4050pF @ 30V | - | 2.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 2.8A SOT23 |
3,996 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.8A (Tc) | 1.8V, 4.5V | 100mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | ±8V | 415pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 40V 110A SO8FL |
4,410 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 110A (Tc) | 4.5V, 10V | 2.8mOhm @ 40A, 10V | 2V @ 250µA | 35nC @ 10V | ±20V | 2100pF @ 20V | - | 3.7W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 7.5A SOP8 |
6,192 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4V, 10V | 21mOhm @ 7.5A, 10V | 2.5V @ 1mA | 21nC @ 5V | ±20V | 1900pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 53A TO-262 |
5,688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 16.5mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1696pF @ 25V | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Diodes Incorporated |
MOSFET NCH 40V 26A POWERDI |
5,778 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 26A (Ta), 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 3V @ 250µA | 82.2nC @ 10V | ±20V | 4508pF @ 20V | - | 2.6W (Ta), 138W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 250V 20A TO220 |
3,348 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | 25nC @ 10V | ±30V | 1028pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 8TSON |
3,798 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 4.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 328pF @ 100V | - | 34.7W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-PAK (5x6) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A DPAK-3 |
3,186 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 5A SOT223-4 |
3,744 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 5A (Ta) | 4.5V, 10V | 63mOhm @ 5A, 10V | 2.7V @ 250µA | 20nC @ 10V | ±20V | 675pF @ 75V | - | 4.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
T6 40V LL LFPAK |
7,254 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta), 78A (Tc) | 4.5V, 10V | 4.5mOhm @ 35A, 10V | 2V @ 40µA | 23nC @ 10V | ±20V | 1300pF @ 25V | - | 3.6W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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ON Semiconductor |
MOSFET N-CH 30V 29A |
7,524 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 29A (Ta), 49A (Tc) | 4.5V, 10V | 1.9mOhm @ 28A, 10V | 3V @ 1mA | 109nC @ 10V | ±20V | 7350pF @ 15V | - | 2.5W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 15A 8-SOIC |
5,760 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | ±20V | 3100pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
TRENCH 8 80V NFET |
6,912 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 68A (Tc) | 10V | 9.5mOhm @ 10A, 10V | 4V @ 70µA | 19nC @ 10V | ±20V | 1140pF @ 40V | - | 3.2W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 12A POWER33 |
7,344 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 18A (Tc) | 4.5V, 10V | 8mOhm @ 12A, 10V | 3V @ 250µA | 23nC @ 10V | ±20V | 1385pF @ 15V | - | 2.3W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Nexperia |
MOSFET N-CH 60V 100A LFPAK56 |
7,758 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 5V, 10V | 4.1mOhm @ 25A, 10V | 2.1V @ 1mA | 103nC @ 10V | ±20V | 7853pF @ 25V | - | 238W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 15A 8DFN |
2,952 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 30A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 1.6V @ 250µA | 105nC @ 10V | ±20V | 5500pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N CH 300V 11.5A TO252 |
7,038 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 11.5A (Tc) | 10V | 420mOhm @ 6A, 10V | 4.5V @ 250µA | 16nC @ 10V | ±30V | 790pF @ 25V | - | 150W (Tc) | -50°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 28A PQFN 5X6 |
4,302 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 28A (Ta), 105A (Tc) | 2.5V, 4.5V | 3mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | ±12V | 3710pF @ 10V | - | 3.6W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 100V 11A PQFN 5X6 |
7,308 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 58A (Tc) | 10V | 13.5mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | ±20V | 3240pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-TQFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CHA 60V 50A POWERDI |
3,942 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 11mOhm @ 50A, 10V | 4V @ 250µA | 35.2nC @ 10V | ±20V | 1926pF @ 30V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 17A DIRECTFET |
8,406 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 17A (Ta), 68A (Tc) | 4.5V, 10V | 4.9mOhm @ 17A, 10V | 2.4V @ 50µA | 18nC @ 4.5V | ±20V | 1570pF @ 13V | - | 2.2W (Ta), 36W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 8A TO220 |
6,102 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 1.15Ohm @ 4A, 10V | 4.5V @ 250µA | 28nC @ 10V | ±30V | 1400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V TO252 |
3,186 |
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