트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 454/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET P-CH 40V 50A POWERDI5060 |
8,784 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 10mOhm @ 9.8A, 10V | 2.5V @ 250µA | 91nC @ 10V | ±25V | 4234pF @ 20V | - | 2.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 20A 93A 5DFN |
3,472 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.7mOhm @ 50A, 10V | 2V @ 250µA | 33.7nC @ 10V | ±20V | 2164pF @ 25V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 8A TO220F |
8,388 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 1.15Ohm @ 4A, 10V | 4.5V @ 250µA | 28nC @ 10V | ±30V | 1400pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Sanken |
MOSFET N-CH 60V 78A TO-220 |
5,130 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 78A (Tc) | 4.5V, 10V | 6.3mOhm @ 39A, 10V | 2.5V @ 1mA | 53.6nC @ 10V | ±20V | 3810pF @ 25V | - | 116W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Sanken |
MOSFET N-CH 75V 62A TO-220 |
5,112 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 62A (Tc) | 4.5V, 10V | 9.3mOhm @ 31.2A, 10V | 2.5V @ 1mA | 57nC @ 10V | ±20V | 4040pF @ 25V | - | 116W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Sanken |
MOSFET N-CH 100V 47A TO-220 |
8,316 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 4.5V, 10V | 17.8mOhm @ 23.4A, 10V | 2.5V @ 1mA | 55.8nC @ 10V | ±20V | 3990pF @ 25V | - | 116W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Sanken |
MOSFET N-CH 75V 42A TO-220F |
3,600 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 4.5V, 10V | 9.7mOhm @ 31.2A, 10V | 2.5V @ 1mA | 54nC @ 10V | ±20V | 4040pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 5A DPAK-3 |
3,816 |
|
- | N-Channel | MOSFET (Metal Oxide) | 525V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 700V 9A TO220 |
8,910 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 9A (Tc) | 10V | 1.2Ohm @ 4.5A, 10V | 4.5V @ 250µA | 35nC @ 10V | ±30V | 1630pF @ 25V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 31.4A SO8FL |
6,552 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 31.4A (Ta), 143A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.2V @ 250µA | 45.2nC @ 10V | ±20V | 3071pF @ 15V | - | 3.71W (Ta), 77W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MV POWER MOS |
7,416 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
CONSUMER |
6,516 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI506 |
8,046 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 3V @ 250µA | 96.3nC @ 10V | ±20V | 4515pF @ 30V | - | 3.13W | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V TO252 T&R |
4,986 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 12mOhm @ 25A, 10V | 2V @ 250µA | 49.1nC @ 10V | ±12V | 3077pF @ 30V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 7.3A 8-SOIC |
5,544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 7.3A (Ta) | 10V | 22mOhm @ 4.4A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1530pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 3.6A 1206-8 |
3,114 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.6A, 4.5V | 600mV @ 250µA (Min) | 14nC @ 4.5V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 20V 3.6A 1206-8 |
5,328 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.6A, 4.5V | 600mV @ 250µA (Min) | 14nC @ 4.5V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 600V 2A CPT3 |
4,824 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | - | - | - | ±30V | - | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N CH 300V 11.5A TO252 |
6,174 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 11.5A (Tc) | 10V | 420mOhm @ 6A, 10V | 4.5V @ 250µA | 16nC @ 10V | ±30V | 790pF @ 25V | - | 150W (Tc) | -50°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Renesas Electronics America |
MOSFET N-CH 30V 34A 8HVSON |
3,996 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Tc) | 4.5V, 10V | 2.6mOhm @ 34A, 10V | - | 83nC @ 10V | ±20V | 4660pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 100V 40A POWERDI |
6,030 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 28mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 2245pF @ 50V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET NCH 30V 100A POWERDI |
6,426 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.6mOhm @ 25A, 10V | 2V @ 1mA | 77nC @ 10V | ±16V | 5000pF @ 15V | - | 1.2W (Ta), 136W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
4,698 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
3,474 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 3A TO220F |
7,974 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 3A (Ta), 12A (Tc) | 4.5V, 10V | 85mOhm @ 10A, 10V | 2.8V @ 250µA | 22nC @ 10V | ±20V | 1165pF @ 75V | - | 2.1W (Ta), 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
3,544 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
2,790 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V SO-8 T&R 2 |
6,894 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 16.2A (Ta) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 156nC @ 10V | ±20V | 7693pF @ 15V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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ON Semiconductor |
MOSFET N-CH 100V 8WDFN |
8,118 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
5,634 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | - | 22mOhm @ 30A, 10V | 4V @ 50µA | 51nC @ 10V | - | 1440pF @ 25V | - | - | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |