트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 467/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 60A DPAK-3 |
3,654 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Ta) | 6V, 10V | 8mOhm @ 30A, 10V | 3V @ 1mA | 60nC @ 10V | ±20V | 2900pF @ 10V | - | 88W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 65A DPAK-3 |
4,788 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 65A (Ta) | 6V, 10V | 4.5mOhm @ 32.5A, 10V | 3V @ 1mA | 63nC @ 10V | ±20V | 2800pF @ 10V | - | 88W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 700V 9A TO262F |
6,606 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 9A (Tc) | 10V | 1.2Ohm @ 4.5A, 10V | 4.5V @ 250µA | 35nC @ 10V | ±30V | 1630pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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Vishay Siliconix |
MOSFET N-CH 650V 7A TO252AA |
6,156 |
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E | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 820pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 650V 7A TO252AA |
2,142 |
|
E | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 820pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 650V 7A TO252AA |
8,640 |
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E | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 820pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 25V 28A S3 |
3,598 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 28A (Ta), 125A (Tc) | 4.5V, 10V | 1.7mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | ±16V | 2510pF @ 13V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ S3C | DirectFET™ Isometric S3C |
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Infineon Technologies |
MOSFET N-CHANNEL_100+ |
6,426 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 50A DPAK |
5,778 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | ±16V | 3779pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
5,742 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V 9.5A DPAK-3 |
8,388 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 9.5A (Ta), 50A (Tc) | 5V, 10V | 11.6mOhm @ 50A, 10V | 3V @ 250µA | 32nC @ 5V | ±20V | 2810pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
8,370 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 3mOhm @ 100A, 10V | 2.2V @ 40µA | 72nC @ 10V | ±16V | 5300pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
2,592 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | - | 75mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | - | 370pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK |
6,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | 2950pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK |
5,454 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | 2950pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 20A DPAK |
5,886 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | - | 45mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | - | 450pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 800V 2.6A TO220-3 |
2,880 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 2.6A (Tc) | 10V | 2.25Ohm @ 1.3A, 10V | 4.5V @ 260µA | 14nC @ 10V | ±20V | 585pF @ 100V | - | 21.9W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
T8 80V 1 PART PROLIFERATI |
4,140 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 17A (Ta), 89A (Tc) | 10V | 5.5mOhm @ 20A, 10V | 4V @ 120µA | 32nC @ 10V | ±20V | 2085pF @ 40V | - | 3.8W (Ta), 104W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Diodes Incorporated |
MOSFET N-CH 450V 0.09A TO92-3 |
2,070 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 90mA (Ta) | 10V | 50Ohm @ 100mA, 10V | 3V @ 1mA | - | ±20V | 70pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
5,004 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | ±20V | 557pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 32A 8SON |
7,020 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 40A (Tc) | 4.5V, 10V | 1.3mOhm @ 20A, 10V | 2V @ 250µA | 50nC @ 10V | ±16V | 3400pF @ 12V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 29A D2PAK |
2,268 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 100A POWERPAKSO |
7,632 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 204nC @ 10V | +20V, -16V | 10500pF @ 20V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 34.4A SO-8 |
4,950 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 34.4A (Tc) | 7.5V, 10V | 35mOhm @ 20A, 10V | 4V @ 250µA | 48nC @ 10V | ±20V | 1935pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET P-CH 450V 4.6A TO251 |
4,842 |
|
- | P-Channel | MOSFET (Metal Oxide) | 450V | 4.6A (Tc) | 10V | 4.9Ohm @ 1.05A, 10V | 5V @ 250µA | 13.7nC @ 10V | ±30V | 547pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3, IPak, Short Leads |
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ON Semiconductor |
MOSFET N-CH 30V 31A |
4,104 |
|
PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 31A (Ta), 49A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 3V @ 1mA | 133nC @ 10V | ±20V | 8705pF @ 15V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
2,646 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 4.6mOhm @ 90A, 10V | 2.2V @ 60µA | 110nC @ 10V | ±16V | 8180pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 7A TO220F |
7,308 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 434pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V D2PAK TO-263 |
4,680 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 236A SO8FL |
6,984 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 246A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2.2V @ 250µA | 128nC @ 10V | ±20V | 9821pF @ 15V | - | 950mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |