트랜지스터-FET, MOSFET-단일
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
필터보기
필터 재설정
필터 적용
카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 470/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
MOSFET N-CH 100V 41A TO-220F |
8,856 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 41A (Tc) | 4.5V, 10V | 11.6mOhm @ 33A, 10V | 2.5V @ 1.5mA | 88.8nC @ 10V | ±20V | 6420pF @ 25V | - | 42W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V D2PAK TO-263 |
3,544 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH 20V 6.2A 8-MSOP |
7,080 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 2.5V, 4.5V | 20mOhm @ 11A, 4.5V | 700mV @ 250µA | 18.6nC @ 4.5V | ±20V | 1900pF @ 10V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MSOP | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 20A TP-FA |
8,622 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta) | 4V, 10V | 51mOhm @ 10A, 10V | 2.6V @ 1mA | 16nC @ 10V | ±20V | 750pF @ 20V | - | 1W (Ta), 23W (Tc) | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 48A D2PAK |
7,650 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1360pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3 |
4,086 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.8Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3 |
3,420 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.8Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 100V 350MA TO92-3 |
2,070 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3 |
5,076 |
|
- | N-Channel | MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 10Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3 |
3,348 |
|
- | N-Channel | MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 10Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Vishay Siliconix |
MOSFET N-CH 650V 6A IPAK |
6,642 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 820pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 100A POWERDI5060 |
4,986 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 2mOhm @ 50A, 10V | 3V @ 250µA | 130.8nC @ 10V | ±20V | 6555pF @ 30V | - | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
5,346 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | ±20V | 6500pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 650V 7A TO262F |
2,682 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 434pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 100A POWERDI5060 |
2,664 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 3V @ 250µA | 47.4nC @ 4.5V | ±20V | 4515pF @ 30V | - | 2.6W (Ta), 138W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 650V 12A TO262F |
6,876 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 720mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±30V | 2150pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
3,384 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | 10400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH TO263-3 |
6,390 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 10.8mOhm @ 45A, 10V | 2V @ 85µA | 55nC @ 10V | +5V, -16V | 3770pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 9A WDSON-2 |
5,598 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta), 40A (Tc) | 6V, 10V | 13.4mOhm @ 30A, 10V | 3.5V @ 40µA | 30nC @ 10V | ±20V | 2300pF @ 50V | - | 2.2W (Ta), 43W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
|
|
|
ON Semiconductor |
MOSFET N-CH 900V 4A |
3,258 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4.2Ohm @ 2A, 10V | 5V @ 250µA | 22nC @ 10V | ±30V | 960pF @ 25V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 14A DIRECTFET |
2,466 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 4.5V, 10V | 6.6mOhm @ 35A, 10V | 2.5V @ 50µA | 33nC @ 4.5V | ±16V | 2020pF @ 25V | - | 2.2W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ SC | DirectFET™ Isometric SC |
|
|
|
Renesas Electronics America |
MOSFET N-CH 40V 100A TO-220 |
6,840 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 10V | 3.7mOhm @ 50A, 10V | - | 100nC @ 10V | ±20V | 5550pF @ 25V | - | 1.5W (Ta), 119W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |
3,546 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.7A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 527pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 500V 8A TO-220F-3 |
2,664 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 1.05Ohm @ 4A, 10V | 5V @ 250µA | 24nC @ 10V | ±30V | 1130pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Sanken |
MOSFET N-CH 60V 24A TO-220F |
8,532 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Tc) | 4.5V, 10V | 21.8mOhm @ 15.8A, 10V | 2.5V @ 250µA | 16nC @ 10V | ±20V | 1050pF @ 25V | - | 29W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V 29A 140A 5DFN |
4,158 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 29A (Ta), 140A (Tc) | 10V | 2.3mOhm @ 50A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 2100pF @ 25V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 80V 5DFN |
5,814 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 161A I-PAK |
7,974 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
3,528 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | ±16V | 3980pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
2,502 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | ±16V | 3980pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |