트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 513/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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IXYS |
MOSFET N-CH 650V 8A X2 TO-252 |
6,840 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 500mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V 10.8A TO220F |
3,438 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10.8A (Tc) | 10V | 299mOhm @ 5.4A, 10V | 4V @ 250µA | 35.6nC @ 10V | ±30V | 1505pF @ 100V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 315A DIRECTFET |
8,406 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 156A (Tc) | 10V | 1.9mOhm @ 94A, 10V | 4V @ 150µA | 134nC @ 10V | ±20V | 5469pF @ 25V | - | 3.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 12A TO-220SIS |
6,606 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 25A TO220 |
7,488 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 190mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4nC @ 10V | ±30V | 1278pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 15A TO263 |
4,392 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1640pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO220-3 |
3,400 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 16A TO220F |
3,852 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 199mOhm @ 8A, 10V | 4V @ 250µA | 52.3nC @ 10V | ±30V | 2170pF @ 100V | - | 134.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V POWER56 |
5,760 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 32A (Ta), 245A (Tc) | 8V, 10V | 1.65mOhm @ 32A, 10V | 4.5V @ 250µA | 154nC @ 10V | ±20V | 8235pF @ 30V | - | 3.3W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
7,452 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | ±20V | 10120pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 240A PSOF8 |
8,838 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 10V | 1.5mOhm @ 80A, 10V | 4V @ 250µA | 169nC @ 10V | ±20V | 10300pF @ 30V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 6.2A TO-220SIS |
3,474 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Ta) | 10V | 750mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | ±30V | 390pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A IPAK |
8,856 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | ±30V | 570pF @ 300V | Super Junction | 80W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
5,454 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Ta) | 10V | 380mOhm @ 6.5A, 10V | 4.5V @ 1mA | 35nC @ 10V | ±30V | 1300pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
8,910 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.8mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
7,668 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4V, 5V | 28mOhm @ 31A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 3300pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 200V 27A TO-220 |
3,546 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 27A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 150V 38A TO-220 |
5,076 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 38A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MV POWER MOS |
7,038 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 40V 2A SAWN ON FOIL |
3,384 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 2A (Tj) | 10V | 50mOhm @ 2A, 10V | 4V @ 200µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 500V 17A TO220-3 |
3,672 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45nC @ 10V | ±20V | 1800pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 550V TO-220 |
3,690 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45nC @ 10V | ±20V | 1800pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
FET 80V 224A |
3,996 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO262 |
7,380 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
HIGH POWER_LEGACY |
6,876 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
HIGH POWER_LEGACY |
7,290 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
HIGH POWER_LEGACY |
4,950 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 250V 33A TO-220FM |
2,052 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 33A (Ta) | 10V | - | - | - | ±30V | - | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK |
5,598 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 1KV .1A I-PAK |
4,392 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 100mA (Tc) | 10V | 80Ohm @ 100mA, 10V | 4.5V @ 25µA | 6.9nC @ 10V | ±20V | 54pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |