트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 516/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO220-3 |
7,794 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 7.1mOhm @ 80A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO220-3 |
3,330 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 1.9mA | 64nC @ 10V | ±20V | 1200pF @ 25V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 40V 8PQFN |
6,174 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 8PQFN |
2,286 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 28A D2PAK |
2,988 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 28A (Ta) | 10V | 5mOhm @ 80A, 10V | 4V @ 250µA | 235nC @ 10V | ±20V | 12200pF @ 25V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 29A TO262 |
3,454 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 29A (Tc) | 10V | 150mOhm @ 14.5A, 10V | 3.9V @ 250µA | 26.6nC @ 10V | ±30V | 1312pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 86A D2PAK |
3,834 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 86A (Tc) | 10V | 14.7mOhm @ 34A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4460pF @ 50V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 80V 100A |
4,014 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | ±20V | 8110pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 25V 37A SO8FL |
8,658 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 37A (Ta), 193A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.1V @ 250µA | 40.9nC @ 10V | ±20V | 2652pF @ 12V | - | 3.13W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 79A DPAK |
4,698 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 55V 110A TO-263-7 |
3,312 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 100µA | 67nC @ 10V | ±20V | 3080pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 (IXTA..7) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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IXYS |
MOSFET N-CH 75V 98A TO-263-7 |
7,650 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 98A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-7 (IXTA..7) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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IXYS |
MOSFET N-CH 500V 1.6A D2PAK |
3,400 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 1.6A (Tc) | 10V | 2.3Ohm @ 800mA, 0V | - | 23.7nC @ 5V | ±20V | 645pF @ 25V | Depletion Mode | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
228,162 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 5480pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
2,808 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 3.3mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | ±20V | 10120pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
3,312 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 7A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | 1144pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 29A TO220 |
8,712 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 29A (Tc) | 10V | 150mOhm @ 14.5A, 10V | 3.9V @ 250µA | 26.6nC @ 10V | ±30V | 1312pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V 16A |
8,694 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 320mOhm @ 8A, 10V | 5V @ 250µA | 75nC @ 10V | ±30V | 3000pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 55V 160A TO220AB |
3,312 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 7960pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
TRENCH >=100V |
8,694 |
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OptiMOS™, StrongIRFET™ | - | - | 250V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 650V 30A POWER88 |
8,640 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.5V @ 3mA | 56nC @ 10V | ±30V | 2270pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power88 | 4-PowerTSFN |
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Infineon Technologies |
LOW POWER_LEGACY |
8,550 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V |
5,256 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRANSISTOR N-CH |
8,604 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 200V 32A TO-263 |
5,094 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 32A (Tc) | 10V | 72mOhm @ 16A, 10V | 4.5V @ 250µA | 38nC @ 10V | ±20V | 1760pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 120A D2PAK-7 |
8,262 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | ±20V | 5360pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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ON Semiconductor |
MOSFET N-CH 800V 23A TO220 |
5,364 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 23A (Tc) | 10V | 220mOhm @ 11.5A, 10V | 4.5V @ 2.3mA | 105nC @ 10V | ±20V | 4560pF @ 100V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
6,552 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 1.1mA | 43nC @ 10V | ±20V | 1520pF @ 100V | - | 139W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
5,598 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 3V @ 250µA | 125nC @ 10V | ±20V | 5600pF @ 15V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
TRANSISTOR N-CH |
7,128 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |