트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 528/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 150V 1A SAWN ON FOIL |
2,106 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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ON Semiconductor |
MOSFET N-CH 650V 24A |
3,294 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 2.4mA | 94nC @ 10V | ±20V | 3737pF @ 100V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 550V 13A D2PAK |
5,220 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 550V | 16A (Tc) | 10V | 192mOhm @ 8A, 10V | 5V @ 250µA | 31nC @ 10V | ±25V | 1260pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 0.75A TO-263 |
5,310 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 750mA (Tc) | 10V | 17Ohm @ 375mA, 10V | 4.5V @ 250µA | 7.8nC @ 10V | ±30V | 260pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 55V 110A TO-220 |
2,700 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 13.5mOhm @ 500mA, 10V | 5.5V @ 250µA | 76nC @ 10V | ±20V | 2210pF @ 25V | - | 390W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1200V 1A TO-220 |
2,664 |
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PolarVHV™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 1A (Tc) | 10V | 20Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.6nC @ 10V | ±20V | 550pF @ 25V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 42A TO-220 |
6,318 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 250V | 42A (Tc) | 10V | 84mOhm @ 500mA, 10V | 5.5V @ 250µA | 70nC @ 10V | ±20V | 2300pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 150V 62A TO-220 |
3,348 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 62A (Tc) | 10V | 40mOhm @ 31A, 10V | 5.5V @ 250µA | 70nC @ 10V | ±20V | 2250pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 130A D2PAK |
5,256 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 1mA | 104nC @ 10V | - | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 20A TO-263AA |
6,624 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 300mOhm @ 10A, 10V | 5V @ 1.5mA | 36nC @ 10V | ±30V | 1800pF @ 25V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
60V/220A TRENCHT3 HIPERFET MOSFE |
4,986 |
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HiperFET™, TrenchT3™ | N-Channel | MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 4mOhm @ 100A, 10V | 4V @ 250µA | 136nC @ 10V | ±20V | 8500pF @ 25V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
SUPERFET3 650V D2PAK PKG |
4,482 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 3mA | 58nC @ 10V | ±30V | 2560pF @ 400V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 1A SAWN ON FOIL |
6,534 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 250µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Texas Instruments |
MOSFET N-CH 80V 200A DDPAK-3 |
2,358 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 200A (Ta) | 6V, 10V | 3.1mOhm @ 100A, 10V | 3.2V @ 250µA | 76nC @ 10V | ±20V | 7920pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MV POWER MOS |
6,300 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 900V TO-247 |
3,186 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
7,128 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 37A TO263 |
3,420 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 109mOhm @ 21A, 10V | 3.8V @ 250µA | 40nC @ 10V | ±30V | 2154pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO247AC |
8,802 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 1690pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 14A TO-220 |
2,268 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 550mOhm @ 7A, 10V | 5.5V @ 2.5mA | 36nC @ 10V | ±30V | 2500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH |
5,616 |
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TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 36V | 380A (Tc) | 10V | 1mOhm @ 100A, 10V | 4V @ 250µA | 260nC @ 10V | ±15V | 13400pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 202A D2PAK |
5,166 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 20A 4VSON |
4,122 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 104mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1819pF @ 400V | - | 122W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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IXYS |
MOSFET N-CH 500V 12A D2-PAK |
6,714 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 500mOhm @ 6A, 10V | 5.5V @ 1mA | 29nC @ 10V | ±30V | 1830pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-220SIS |
7,758 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2600pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 30V 47A 303A 5DFN |
3,726 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Ta), 303A (Tc) | 4.5V, 10V | 0.7mOhm @ 30A, 10V | 2.2V @ 250µA | 139nC @ 10V | ±20V | 10144pF @ 15V | - | 3.2W (Ta), 134W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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IXYS |
MOSFET N-CH 100V 130A TO-263-7 |
7,956 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | ±20V | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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IXYS |
MOSFET N-CH 150V 76A TO-220 |
2,898 |
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HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 150V | 76A (Tc) | 10V | 20mOhm @ 38A, 10V | 4.5V @ 250µA | 97nC @ 10V | ±20V | 5800pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH |
6,768 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 145mOhm @ 11A, 10V | 5V @ 1.5mA | 37nC @ 10V | ±30V | 2190pF @ 25V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 80V 164A 8-DUAL COOL |
4,392 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 164A (Tc) | 8V, 10V | 1.35mOhm @ 36A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 19600pF @ 40V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-Dual Cool™88 | 8-PowerVDFN |