트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 527/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
6,858 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 223µA | 167nC @ 10V | ±20V | 11550pF @ 25V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 240A HSOF-8 |
4,788 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.3V @ 143µA | 124nC @ 10V | ±20V | 9750pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Vishay Siliconix |
MOSFET N-CH 500V 12A D2PAK |
4,194 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48nC @ 10V | ±30V | 1375pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 80A TO-262AB |
6,624 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 80A (Tc) | 6V, 10V | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 124nC @ 10V | ±20V | 6400pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS |
MOSFET N-CH 500V 12A TO-220 |
8,514 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 500mOhm @ 6A, 10V | 5.5V @ 1mA | 29nC @ 10V | ±30V | 1830pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB |
4,014 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6920pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET P-CH 100V 26A TO-252 |
8,946 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 26A (Tc) | 10V | 90mOhm @ 13A, 10V | 4.5V @ 250µA | 52nC @ 10V | ±15V | 3820pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 18A TO247 |
6,210 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 390mOhm @ 9A, 10V | 4.5V @ 250µA | 68nC @ 10V | ±30V | 3785pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 75A D2PAK |
4,302 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 7670pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
5,202 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | ±30V | 1036pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 10A D2-PAK |
2,880 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 740mOhm @ 5A, 10V | 5.5V @ 250µA | 32nC @ 10V | ±30V | 1610pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 3A TO-263 |
6,930 |
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PolarVHV™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 4.5V @ 250µA | 39nC @ 10V | ±20V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 150V 102A TO-263 |
6,714 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 102A (Tc) | 10V | 18mOhm @ 500mA, 10V | 5V @ 1mA | 87nC @ 10V | ±20V | 5220pF @ 25V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 150V 56A TO-220 |
6,624 |
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TrenchHV™ | N-Channel | MOSFET (Metal Oxide) | 150V | 56A (Tc) | 10V | 36mOhm @ 28A, 10V | 4.5V @ 250µA | 34nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 48A TO-3P |
4,068 |
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Trench™ | N-Channel | MOSFET (Metal Oxide) | 200V | 48A (Tc) | 10V | 50mOhm @ 24A, 10V | 4.5V @ 250µA | 60nC @ 10V | ±30V | 3090pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 150V 74A TO-3P |
6,552 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 74A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
6,552 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 21A TO220-3 |
2,754 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 660µA | 52nC @ 10V | ±20V | 2000pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
HIGH POWER_LEGACY |
6,246 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 550V 23A TO-220 |
6,966 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | ±20V | 2540pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 99A D2PAK |
6,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 150V 99A TO262 |
5,940 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 120V 1A SAWN ON FOIL |
4,806 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 244µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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IXYS |
MOSFET N-CH 500V 16A D2-PAK |
7,416 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 400mOhm @ 8A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 14A D2-PAK |
8,496 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 550mOhm @ 7A, 10V | 5.5V @ 250µA | 36nC @ 10V | ±30V | 2500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 300A 8-HPSOF |
2,898 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 300A (Tc) | 10V | 2mOhm @ 80A, 10V | 4.5V @ 250µA | 124nC @ 10V | ±20V | 6970pF @ 50V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Infineon Technologies |
HIGH POWER_NEW |
7,776 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 650V 29A TO220AB |
5,220 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 29A (Tc) | 10V | 112mOhm @ 14A, 10V | 4V @ 250µA | 140nC @ 10V | ±30V | 3405pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 250V 35A DIRECTFET |
3,024 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 375A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165nC @ 10V | ±30V | 6714pF @ 25V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MV POWER MOS |
7,596 |
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