트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 568/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi |
MOSFET N-CH 600V 42A SOT-227 |
7,416 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | 11300pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 67A T-MAX |
4,680 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141nC @ 10V | ±30V | 7010pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 85V 80A TO-268 |
4,104 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 85V | 80A (Tc) | 10V | 9mOhm @ 40A, 10V | 4V @ 4mA | 180nC @ 10V | ±20V | 4800pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 50A SMPD |
2,232 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | ISOPLUS-SMPD™.B | 9-SMD Module |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 200V 108A |
2,466 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 108A (Tc) | 10V | 14mOhm @ 80A, 10V | 5.5V @ 250µA | 161nC @ 10V | ±30V | 10720pF @ 50V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 64A ISOPLUS264 |
8,964 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 55A (Tc) | 10V | 66mOhm @ 40A, 10V | 5V @ 8mA | 260nC @ 10V | ±30V | 10500pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ |
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IXYS |
MOSFET N-CH 150V 240A SOT227 |
2,664 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 240A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 460nC @ 10V | ±20V | 32000pF @ 25V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1000V 9A ISOPLUS247 |
6,174 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 9A (Tc) | 10V | 1.2Ohm @ 5A, 10V | 5.5V @ 4mA | 90nC @ 10V | ±20V | 2900pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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Microsemi |
MOSFET N-CH 500V 44A SOT227 |
3,744 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 4V @ 2.5mA | 312nC @ 10V | ±30V | 7410pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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GeneSiC Semiconductor |
TRANS SJT 1200V 25A TO263-7 |
8,496 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403pF @ 800V | - | 170W (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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IXYS |
MOSFET N-CH 900V 33A SOT227 |
6,642 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 900V | 33A (Tc) | 10V | 210mOhm @ 20A, 10V | 6.5V @ 1mA | 230nC @ 10V | ±30V | 14000pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 72A SOT-227 |
3,924 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 72A (Tc) | 10V | 80mOhm @ 34A, 10V | 4V @ 250µA | 338nC @ 10V | ±20V | 10000pF @ 25V | - | 1136W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1200V 17A PLUS247 |
7,074 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 17A (Tc) | 20V | 900mOhm @ 8.5A, 20V | 5V @ 250µA | 155nC @ 15V | ±30V | 8300pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 38A T-MAX |
6,948 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 800V | 38A (Tc) | 10V | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195nC @ 10V | ±30V | 5200pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 500V 20A TO-268 |
5,904 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 330mOhm @ 10A, 10V | 3.5V @ 250mA | 125nC @ 10V | ±30V | 2500pF @ 25V | Depletion Mode | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 500V 46A PLUS247 |
4,212 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 20V | 160mOhm @ 500mA, 20V | 6V @ 250µA | 260nC @ 15V | ±30V | 7000pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 22A TO-264 |
2,016 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 22A (Tc) | 20V | 600mOhm @ 11A, 20V | 5V @ 250µA | 270nC @ 15V | ±30V | 7050pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 46A TO-264 |
5,580 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 20V | 160mOhm @ 500mA, 20V | 6V @ 250µA | 260nC @ 15V | ±30V | 7000pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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STMicroelectronics |
ISOTOP PARALL. |
4,752 |
|
MDmesh™ DK5 | N-Channel | MOSFET (Metal Oxide) | 1050V | 46A (Tc) | 10V | 120mOhm @ 23A, 10V | 5V @ 100µA | 204nC @ 10V | ±30V | 6675pF @ 100V | - | 680W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 250V 120A SOT-227B |
2,934 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 120A | - | - | - | - | - | - | - | - | - | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1000V 30A PLUS247 |
6,138 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 30A (Tc) | 10V | 400mOhm @ 15A, 10V | 5V @ 8mA | 186nC @ 10V | ±30V | 8200pF @ 25V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 30A TO-264 |
3,006 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 30A (Tc) | 10V | 400mOhm @ 15A, 10V | 5V @ 8mA | 186nC @ 10V | ±30V | 8200pF @ 25V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 59A SOT227 |
2,196 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | ±30V | 10800pF @ 25V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 52A SOT-227B |
8,874 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 52A (Tc) | 10V | 85mOhm @ 32A, 10V | 5V @ 8mA | 186nC @ 10V | ±30V | 11000pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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TT Electronics/Optek Technology |
MOSFET N-CH 60V 200MA SMD |
6,498 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±40V | 60pF @ 25V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD | 3-SMD, No Lead |
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IXYS |
MOSFET N-CH 1200V 30A PLUS264 |
4,914 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 30A (Tc) | 10V | 350mOhm @ 500mA, 10V | 6.5V @ 1mA | 310nC @ 10V | ±20V | 22500pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 27A SOT-227B |
2,178 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 27A (Tc) | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 170nC @ 10V | ±20V | 7600pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 600V 37A ISOPLUS264 |
5,994 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 92mOhm @ 35A, 10V | 5.5V @ 8mA | 265nC @ 10V | ±30V | 12000pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ |
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IXYS |
MOSFET N-CH 75V 465A DE-475 |
3,204 |
|
GigaMOS™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 465A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 4V @ 8mA | 545nC @ 10V | ±20V | 41000pF @ 25V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DE475 | DE475 |
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IXYS |
MOSFET N-CH 1000V 23A SOT-227B |
5,562 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 23A (Tc) | 10V | - | 5V @ 8mA | - | ±20V | - | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |