트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 74/999
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
34,368 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
22,518 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 40V 6A 8-SO |
51,144 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 25mOhm @ 3A, 10V | 1.8V @ 250µA | 33.7nC @ 10V | ±20V | 1640pF @ 20V | - | 1.52W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 100V 1A SOT-223 |
17,040 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tc) | 4.5V, 10V | 800mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | ±20V | 372pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 600V 0.5A TO-92 |
73,074 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 4.8Ohm @ 1A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 280pF @ 25V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Rohm Semiconductor |
MOSFET P-CH 100V 1.5A TSMT6 |
119,562 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 4V, 10V | 470mOhm @ 1.5A, 10V | 2.5V @ 1mA | 17nC @ 5V | ±20V | 950pF @ 25V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 70V 3.7A SOT-223 |
20,874 |
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- | P-Channel | MOSFET (Metal Oxide) | 70V | 2.6A (Ta) | 4.5V, 10V | 160mOhm @ 2.1A, 10V | 1V @ 250µA | 18nC @ 10V | ±20V | 635pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 40A 8TSDSON |
45,072 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 6V, 10V | 10mOhm @ 20A, 10V | 3.3V @ 14µA | 15nC @ 10V | ±20V | 1075pF @ 30V | - | 2.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 16A POWERPAK1212 |
56,154 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 16A (Tc) | 4.5V, 10V | 8mOhm @ 10A, 10V | 2.5V @ 250µA | 35nC @ 10V | ±20V | 1800pF @ 25V | - | 62.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 17A 8TSON |
87,162 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4.5V, 10V | 11.4mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | ±20V | 2000pF @ 30V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Central Semiconductor Corp |
MOSFET N-CH 20V 650MA SOT523 |
22,254 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 650mA (Ta) | 1.5V, 4.5V | 230mOhm @ 600mA, 4.5V | 1.1V @ 250µA | 1.58nC @ 4.5V | 8V | 100pF @ 16V | - | 300mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223 |
25,200 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | ±20V | 108pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 56A DPAK |
64,044 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 2.25V @ 25µA | 14nC @ 4.5V | ±20V | 1150pF @ 15V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 29A DPAK |
46,818 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 29A (Tc) | 4.5V, 10V | 35mOhm @ 29A, 10V | 2V @ 28µA | 13nC @ 5V | ±20V | 800pF @ 30V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 65A U8FL |
139,152 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 67A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 36nC @ 10V | ±20V | 3366pF @ 15V | - | 810mW (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8-SOIC |
135,798 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 11.9mOhm @ 12A, 10V | 2.4V @ 25µA | 52nC @ 10V | ±20V | 1680pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 13A 8SOIC |
286,002 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11.3mOhm @ 13A, 10V | 3V @ 250µA | 14nC @ 5V | ±20V | 1205pF @ 15V | - | 3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 8A 8-WDFN |
42,060 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4.5V, 10V | 24mOhm @ 7.5A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 850pF @ 25V | - | 3.1W (Ta), 19W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET P-CH 55V 20A DPAK |
105,114 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 20A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | 660pF @ 50V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 12V 6A SSOT-6 |
659,478 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 4.5V | 26mOhm @ 6A, 4.5V | 1.5V @ 250µA | 25nC @ 4.5V | ±8V | 1699pF @ 6V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 60V 4.4A DPAK |
50,532 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 4.4A (Ta) | 4.5V, 10V | 125mOhm @ 2.3A, 10V | 1V @ 250µA | 17.7nC @ 10V | ±20V | 637pF @ 30V | - | 2.11W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 30V 11.5A POWERDI333 |
468 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 11.5A (Ta) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | ±25V | 2246pF @ 15V | - | 940mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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ON Semiconductor |
MOSFET P-CH 30V 6.6A 8-SOIC |
50,034 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 6.6A (Ta) | 4.5V, 10V | 12mOhm @ 11.4A, 10V | 2.5V @ 250µA | 55nC @ 10V | ±20V | 3100pF @ 24V | - | 840mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 100V 42A LFPAK |
263,052 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 27.5mOhm @ 15A, 10V | 4V @ 1mA | 33nC @ 10V | ±20V | 1634pF @ 50V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 150V 1.9A 8-SOIC |
64,944 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 1.9A (Ta) | 10V | 280mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15nC @ 10V | ±30V | 330pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 5A DPAK |
35,556 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CHAN 40V SO-8 |
41,262 |
|
TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 40V | 9.9A (Ta), 14A (Tc) | 4.5V, 10V | 14.2mOhm @ 10A, 10V | 2.3V @ 250µA | 100nC @ 10V | ±20V | 4000pF @ 20V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 200V 7.6A DPAK-3 |
21,462 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 7.6A (Tc) | 5V, 10V | 360mOhm @ 3.8A, 10V | 2.5V @ 250µA | 16nC @ 10V | ±20V | 585pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V LFPAK56 |
84,282 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 49A (Tc) | 5V, 10V | 21.5mOhm @ 15A, 10V | 2.1V @ 1mA | 65.6nC @ 10V | ±20V | 4640pF @ 25V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET P-CH 60V 9.7A TO252-3 |
267,450 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 9.7A (Tc) | 4.5V, 10V | 250mOhm @ 6.8A, 10V | 2V @ 250µA | 21nC @ 10V | ±20V | 450pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |