트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 89/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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ON Semiconductor |
MOSFET N-CH 30V 40A POWER33 |
22,212 |
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Dual Cool™, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 40A (Tc) | 4.5V, 10V | 2.2mOhm @ 22A, 10V | 2.5V @ 250µA | 76nC @ 10V | ±20V | 5170pF @ 15V | - | 3W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ™ 33 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 150V 8.9A 1212-8 |
126,456 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 8.9A (Tc) | 6V, 10V | 295mOhm @ 4A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 1190pF @ 50V | - | 3.7W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 100V 0.7A 4-DIP |
12,828 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 700mA (Ta) | 10V | 1.2Ohm @ 420mA, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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ON Semiconductor |
MOSFET N-CH 40V 100A TO252 |
25,488 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2mOhm @ 80A, 10V | 4V @ 250µA | 112nC @ 10V | ±20V | 6390pF @ 25V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 0.65A POWERFLAT |
47,526 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 650mA (Ta), 2.2A (Tc) | 10V | 1.8Ohm @ 1A, 10V | 4V @ 250µA | 9.5nC @ 10V | ±25V | 188pF @ 50V | - | 2W (Ta), 22W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 800V 5A POWERFLAT |
25,320 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 1.15Ohm @ 2.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 270pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 600V 9A DPAK |
18,678 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | 5V @ 250µA | 17.8nC @ 10V | ±30V | 1000pF @ 100V | - | 92.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V TO220AB |
138,282 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 22mOhm @ 5A, 10V | 2.15V @ 1mA | 9nC @ 10V | ±20V | 447pF @ 15V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB |
43,890 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 1420pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 60V 12A IPAK |
14,604 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta) | 10V | 180mOhm @ 6A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 750pF @ 25V | - | 55W (Tj) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 180A 2WDSON |
92,370 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 36A (Ta), 180A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 196nC @ 10V | ±20V | 16900pF @ 20V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 55V 110A D2PAK |
24,366 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | ±20V | 3247pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 85A D2PAK |
13,854 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3210pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 1A 4-DIP |
26,364 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4V, 5V | 540mOhm @ 600mA, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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ON Semiconductor |
MOSFET P-CH 60V 2.4A TO220AB |
18,084 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 2.4A (Ta) | 10V | 196mOhm @ 12A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 700pF @ 25V | - | 2.4W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 17A I-PAK |
21,342 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET P-CH 60V 7A TO-220 |
21,924 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 7A (Tc) | 10V | 410mOhm @ 3.5A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±25V | 295pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 80V 48A POWER33 |
22,140 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 14A (Ta), 48A (Tc) | 8V, 10V | 6.5mOhm @ 14A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | 3885pF @ 40V | - | 2.3W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 60V 17.2A IPAK |
39,840 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 17.2A (Tc) | 5V, 10V | 60mOhm @ 8.6A, 10V | 2.5V @ 250µA | 13nC @ 5V | ±20V | 630pF @ 25V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO-220AB |
27,024 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 18A TO-220AB |
24,198 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 13.6A TO-220 |
19,236 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 13.6A (Tc) | 5V, 10V | 110mOhm @ 6.8A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | ±20V | 350pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
17,646 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 7A TO220 |
27,690 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta), 23A (Tc) | 4.5V, 10V | 19mOhm @ 20A, 10V | 2.5V @ 250µA | 20nC @ 10V | ±20V | 950pF @ 30V | - | 2.1W (Ta), 41.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 9.7A TO-220AB |
19,620 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK |
54,642 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3130pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 14A TO-220AB |
37,404 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 17A I-PAK |
30,306 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 200V 15A D2PAK |
16,704 |
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MESH OVERLAY™ | N-Channel | MOSFET (Metal Oxide) | 200V | 15A (Tc) | 10V | 160mOhm @ 7.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 800pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 9.8A IPAK |
40,794 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta), 63A (Tc) | 4.5V, 11.5V | 8mOhm @ 30A, 10V | 2.5V @ 250µA | 13nC @ 4.5V | ±20V | 1538pF @ 12V | - | 1.4W (Ta), 54.6W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |