트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 90/999
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 600V 2A DPAK |
32,274 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 100V 1A 4-DIP |
23,904 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 10V | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB |
21,042 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A TO-220AB |
13,260 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-220AB |
15,252 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 55V 80A DPAK |
21,630 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 8.5mOhm @ 32A, 10V | 2.5V @ 250µA | 20nC @ 5V | ±20V | 2200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 25V 100A 8VSON |
7,256 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Ta) | 4.5V, 10V | 0.59mOhm @ 50A, 10V | 1.9V @ 250µA | 250nC @ 10V | ±20V | 14000pF @ 12V | - | 3.2W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
18,702 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.8mOhm @ 40A, 10V | 2.5V @ 250µA | 29nC @ 4.5V | ±20V | 3700pF @ 25V | - | 110W (Tc) | 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 400V 260MA SOT89-3 |
156,120 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 100V 8.1A TO220FP |
42,522 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.1A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 42A D2PAK |
43,206 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 36mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1900pF @ 25V | - | 3.8W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 7.4A POWER56-8 |
25,890 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 7.4A (Ta), 22A (Tc) | 6V, 10V | 23mOhm @ 7.4A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 2680pF @ 50V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (5x6), Power56 | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 150V 6.7A 8-PQFN |
27,426 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 6.7A (Ta), 20A (Tc) | 6V, 10V | 25mOhm @ 6.7A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 2330pF @ 75V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
5,834 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 0.69mOhm @ 50A, 10V | 1.9V @ 250µA | 121nC @ 4.5V | ±20V | 13600pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 100V 22A D2PAK |
15,528 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 10V | 125mOhm @ 11A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | 1500pF @ 25V | - | 3.75W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 17A TO-220AB |
16,188 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 300V 3.2A TO-220 |
18,234 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 3.2A (Tc) | 10V | 2.2Ohm @ 1.6A, 10V | 5V @ 250µA | 7nC @ 10V | ±30V | 230pF @ 25V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
51,804 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 33A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 85nC @ 10V | ±20V | 6020pF @ 20V | - | 3W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 21A TO-220 |
20,040 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Tc) | 5V, 10V | 55mOhm @ 10.5A, 10V | 2.5V @ 250µA | 13nC @ 5V | ±20V | 630pF @ 25V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHAN 100V POWERPAK SO-8 |
25,770 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 93.6A (Tc) | 7.5V, 10V | 4.8mOhm @ 20A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 3750pF @ 50V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Texas Instruments |
MOSFET N-CH 60V 100A 8SON |
112,854 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 6.8mOhm @ 18A, 10V | 2.4V @ 250µA | 20nC @ 10V | ±20V | 1500pF @ 30V | - | 3.2W (Ta), 116W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 55V 31A I-PAK |
163,608 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A I-PAK |
36,642 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 100V 15A TO-220 |
35,094 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 10V | 130mOhm @ 7A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | 460pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3 |
15,480 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 700mA (Tj) | 5V, 10V | 750mOhm @ 1.5A, 10V | 1.6V @ 1mA | - | ±20V | 190pF @ 20V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 100V 36A TO-220AB |
15,834 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1770pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 25V 100A 8VSON |
24,012 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.07mOhm @ 30A, 10V | 1.7V @ 250µA | 47nC @ 4.5V | ±20V | 6180pF @ 15V | - | 3.2W (Ta), 191W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 60V 12A TP |
23,034 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta) | 4V, 10V | 62mOhm @ 6A, 10V | - | 26nC @ 10V | ±20V | 1150pF @ 20V | - | 1W (Ta), 15W (Tc) | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 47A TO-220AB |
18,768 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 47A (Tc) | 4V, 10V | 22mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 400V 9A D2PAK |
23,682 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 400V | 9A (Tc) | 10V | 550mOhm @ 4.5A, 10V | 4.5V @ 100µA | 32nC @ 10V | ±30V | 930pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |