트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 989/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
3,186 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
6,768 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
7,686 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
3,636 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 1.04mA | 39nC @ 10V | ±20V | 1600pF @ 30V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
4,824 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-3 |
5,238 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-3 |
4,590 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 250mOhm @ 1.9A, 10V | 2V @ 270µA | 13.9nC @ 10V | ±20V | 420pF @ 30V | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-3 |
4,878 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
5,760 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 1.7mA | 63nC @ 10V | ±20V | 2500pF @ 30V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
6,912 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 1.04mA | 39nC @ 10V | ±20V | 1600pF @ 30V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
MOSFET P-CH TO252-3 |
5,544 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 16.4A (Tc) | 10V | 90mOhm @ 16.4A, 10V | 4V @ 710µA | 27nC @ 10V | ±20V | 1100pF @ 30V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
7,596 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
8,496 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | 4V @ 270µA | 10.6nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH SOT223-3 |
7,146 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH SOT223-3 |
6,192 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH SOT223-3 |
5,940 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
7,938 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5,184 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5,562 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5,454 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5,238 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH TO-220 |
6,588 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Central Semiconductor Corp |
MOSFET P-CH 30V |
8,352 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 2.5V, 4.5V | 91mOhm @ 1.2A, 4.5V | 1.4V @ 250µA | 9.6nC @ 5V | 12V | 800pF @ 10V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
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Central Semiconductor Corp |
MOSFET P-CH 30V |
2,916 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 2.5V, 4.5V | 91mOhm @ 1.2A, 4.5V | 1.4V @ 250µA | 9.6nC @ 5V | 12V | 800pF @ 10V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
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ON Semiconductor |
MOSFET N-CH 60V SOT-23 |
3,654 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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|
ON Semiconductor |
MOSFET N-CH 60V SOT-23 |
3,348 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 5X6 DFN |
3,798 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 5X6 DFN |
8,964 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Alpha & Omega Semiconductor |
MOSFET N-CH 100V TO-220 |
4,734 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Alpha & Omega Semiconductor |
MOSFET N-CH 30V 8DFN |
2,052 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 170A (Tc) | 4.5V, 10V | 2.3mOhm @ 20A, 10V | 2.4V @ 250µA | 100nC @ 10V | ±20V | 5200pF @ 15V | - | 2.3W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerVDFN |