트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 990/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 100V 67A TO263-3 |
2,556 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 20A 8-SOIC |
6,840 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 65A DPAK |
8,424 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH |
4,680 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH |
4,392 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
TRANSISTOR NPN |
2,412 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
TRANSISTOR NPN |
5,418 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V 7.6A DPAK |
2,394 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 50V 200MA SOT-23-3 |
7,416 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET P-CH 50V 130MA SOT-23-3 |
8,856 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET P-CH 40V 10.8A DPAK |
6,102 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V DPAK-3 |
8,244 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET P-CH 12V SOT-363 |
2,646 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
NXP |
MOSFET N-CH 100V 17A TO220AB |
6,570 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 110mOhm @ 9A, 10V | 4V @ 1mA | 40nC @ 10V | ±20V | 633pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
NXP |
MOSFET N-CH 100V 23A TO220AB |
2,682 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 1mA | 65nC @ 10V | ±20V | 1187pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
NXP |
MOSFET N-CH 200V 16A TO220AB |
4,176 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 180mOhm @ 8A, 10V | 4V @ 1mA | 63nC @ 10V | ±20V | 1850pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
NXP |
MOSFET N-CH 200V 300MA SOT54 |
5,490 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 300mA (Ta) | 2.8V | 5Ohm @ 100mA, 2.8V | 1.8V @ 1mA | - | ±20V | 120pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
NXP |
MOSFET N-CH 200V 300MA SOT54 |
6,894 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 300mA (Ta) | 2.8V | 5Ohm @ 100mA, 2.8V | 1.8V @ 1mA | - | ±20V | 120pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
NXP |
MOSFET N-CH 250V 310MA SOT54 |
8,748 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 310mA (Ta) | 2.4V, 10V | 5Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 120pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
NXP |
MOSFET N-CH 250V 310MA SOT54 |
8,784 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 310mA (Ta) | 2.4V, 10V | 5Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 120pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
NXP |
MOSFET N-CH 300V 300MA SOT54 |
4,356 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 300mA (Ta) | 2.4V, 10V | 6Ohm @ 250mA, 10V | 2V @ 1mA | - | ±20V | 120pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
NXP |
MOSFET P-CH 250V 0.2A SOT54 |
5,004 |
|
- | P-Channel | MOSFET (Metal Oxide) | 250V | 200mA (Ta) | 10V | 15Ohm @ 200mA, 10V | 2.8V @ 1mA | - | 20V | 90pF @ 25V | - | 1W (Ta) | 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
NXP |
MOSFET P-CH 300V 0.17A SOT54 |
3,690 |
|
- | P-Channel | MOSFET (Metal Oxide) | 300V | 170mA (Ta) | 10V | 17Ohm @ 170mA, 10V | 2.55V @ 1mA | - | ±20V | 90pF @ 25V | - | 1W (Ta) | -65°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
NXP |
MOSFET N-CH 100V 190MA SOT54 |
4,428 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 5V | 10Ohm @ 150mA, 5V | 3.5V @ 1mA | - | 20V | 40pF @ 10V | - | 830mW (Ta) | 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
NXP |
MOSFET N-CH 30V 75A TO220AB |
8,676 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 6000pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
NXP |
MOSFET N-CH 55V 75A TO220AB |
2,376 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 11mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 3093pF @ 25V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
NXP |
MOSFET N-CH 55V 73A TO220AB |
7,560 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 73A (Tc) | 10V | 14mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 2464pF @ 25V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
NXP |
MOSFET N-CH 55V 40A TO220AB |
5,562 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 40A (Tc) | 10V | 28mOhm @ 20A, 10V | 4V @ 1mA | - | ±16V | 1300pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
NXP |
MOSFET N-CH 100V 37A TO220AB |
8,262 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 37A (Tc) | 10V | 40mOhm @ 40A, 10V | 4V @ 1mA | - | ±20V | 2293pF @ 25V | - | 138W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
NXP |
MOSFET N-CH 55V 19.7A TO220AB |
6,264 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 19.7A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 1mA | - | ±16V | 500pF @ 25V | - | 61W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |