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Taiwan Semiconductor Corporation 정류기-싱글

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Taiwan Semiconductor Corporation
기록 5,388
페이지 34/180
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
1N5391G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
8,082
-
Standard
50V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5391GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
7,452
Automotive, AEC-Q101
Standard
50V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5392G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
4,140
-
Standard
100V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5392GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
2,970
Automotive, AEC-Q101
Standard
100V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5393G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
3,294
-
Standard
200V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5393GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
3,114
Automotive, AEC-Q101
Standard
200V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5395G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
5,058
-
Standard
400V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5395GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
7,596
Automotive, AEC-Q101
Standard
400V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5397G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
2,718
-
Standard
600V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5397GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
5,670
Automotive, AEC-Q101
Standard
600V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A01G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO204AC
3,312
-
Standard
50V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A02G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO204AC
2,520
-
Standard
100V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
2A03G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
3,762
-
Standard
200V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
RS1JL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
4,446
-
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
3,546
-
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
8,100
-
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1BL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
2,322
-
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
5,850
-
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
5,130
-
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
8,820
-
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
7,722
-
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SR115 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A DO204AL
6,084
-
Schottky
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
2A07G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO204AC
2,412
-
Standard
-
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
F1T6G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A TS-1
3,582
-
Standard
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
2A01GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO204AC
6,480
Automotive, AEC-Q101
Standard
50V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
RSFALHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
3,474
Automotive, AEC-Q101
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFALHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
6,444
Automotive, AEC-Q101
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
3,312
Automotive, AEC-Q101
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
5,940
Automotive, AEC-Q101
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
4,770
Automotive, AEC-Q101
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C