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Taiwan Semiconductor Corporation 정류기-싱글

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Taiwan Semiconductor Corporation
기록 5,388
페이지 71/180
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
S5A V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 5A DO214AB
3,150
-
Standard
50V
5A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 50V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5B V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 5A DO214AB
8,568
-
Standard
100V
5A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 100V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5D V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO214AB
3,384
-
Standard
200V
5A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5G V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO214AB
8,370
-
Standard
400V
5A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5J V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO214AB
3,598
-
Standard
600V
5A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5K V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AB
5,490
-
Standard
800V
5A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5M V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 5A DO214AB
2,304
-
Standard
-
5A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SSL12 R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO214AC
8,190
-
Schottky
20V
1A
390mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SSL13 R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO214AC
2,970
-
Schottky
30V
1A
390mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SSL14 R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A DO214AC
8,694
-
Schottky
40V
1A
390mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SK32AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 3A DO214AC
3,942
Automotive, AEC-Q101
Schottky
20V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK33AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO214AC
5,346
Automotive, AEC-Q101
Schottky
30V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK34AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A DO214AC
3,600
Automotive, AEC-Q101
Schottky
40V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK35AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 3A DO214AC
8,028
Automotive, AEC-Q101
Schottky
50V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 50V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK36AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A DO214AC
7,776
Automotive, AEC-Q101
Schottky
60V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK39AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 3A DO214AC
8,676
Automotive, AEC-Q101
Schottky
90V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK19B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A DO214AA
4,608
-
Schottky
90V
1A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS210 M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A DO214AA
7,020
-
Schottky
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS210HM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A DO214AA
6,300
Automotive, AEC-Q101
Schottky
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS29 M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A DO214AA
8,568
-
Schottky
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S4A V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 4A DO214AB
7,308
-
Standard
50V
4A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 50V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S4B V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 4A DO214AB
3,366
-
Standard
100V
4A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
100µA @ 100V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S4D V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
7,236
-
Standard
200V
4A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
100µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S4G V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO214AB
2,826
-
Standard
400V
4A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
100µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S4J V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
6,192
-
Standard
600V
4A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
100µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S4K V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 4A DO214AB
2,736
-
Standard
800V
4A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
100µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S4M V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 4A DO214AB
5,616
-
Standard
-
4A
-
Standard Recovery >500ns, > 200mA (Io)
1.5µs
100µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES2A M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AA
7,650
-
Standard
50V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2B M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
7,542
-
Standard
100V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2C M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AA
5,112
-
Standard
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C