Toshiba Semiconductor and Storage 정류기-싱글

시리즈

재설정

다이오드 유형

재설정

전압-DC 역방향 (Vr) (최대)

재설정

전류-평균 정류 (Io)

재설정

전압-순방향 (Vf) (최대) @ If

재설정

속도

재설정

역 복구 시간 (trr)

재설정

전류-역방향 누설 @ Vr

재설정

커패시턴스 @ Vr, F

재설정

장착 유형

재설정

패키지 / 케이스

재설정

공급자 장치 패키지

재설정

작동 온도-접합

재설정

필터보기

필터 재설정

필터 적용

카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

제조업체Toshiba Semiconductor and Storage

기록 225

페이지 3/8

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
CCS15S30,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1.5A CST2C	4,842	-	Schottky	20V	1.5A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 0V, 1MHz	Surface Mount	0603 (1608 Metric)	CST2C	125°C (Max)
CCS15S40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A CST2C	6,498	-	Schottky	40V	1.5A	550mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	170pF @ 0V, 1MHz	Surface Mount	0603 (1608 Metric)	CST2C	125°C (Max)
CBS05F30,L3F	Toshiba Semiconductor and Storage	X34 PB-F CST2B SBD DIODE VR:30V,	3,598	-	Schottky	30V	500mA	-	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	118pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2B	125°C (Max)
CUS15S40,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A	7,704	-	Schottky	40V	1.5A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	170pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS397TE85LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 100MA SC70	3,672	-	Standard	400V	100mA	1.3V @ 100mA	Small Signal =< 200mA (Io), Any Speed	500ns	1µA @ 400V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SC-70	125°C (Max)
CCS15F40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A CST2C	7,182	-	Schottky	40V	1.5A	640mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	25µA @ 40V	130pF @ 0V, 1MHz	Surface Mount	0603 (1608 Metric)	CST2C	150°C (Max)
CUHS10F60,H3F	Toshiba Semiconductor and Storage	SMALL-SIGNAL SCHOTTKY BARRIER DI	8,928	-	Schottky	60V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 60V	130pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	US2H	150°C (Max)
CCS15S30,L3QUF	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1.5A CST2C	7,002	-	Schottky	20V	1.5A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 0V, 1MHz	Surface Mount	0603 (1608 Metric)	CST2C	125°C (Max)
CMS10(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A MFLAT	2,032	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	50pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
1SS404,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 300MA USC	7,668	-	Schottky	20V	300mA	450mV @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 20V	46pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
CTS520,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA CST2	4,806	-	Schottky	30V	200mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 30V	16pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	125°C (Max)
TBAS16,LM	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 215MA SOT23-3	6,642	-	Standard	80V	215mA	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	SOT-23-3 Flat Leads	SOT-23-3	-
TBAT54,LM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 140MA SOT23	3,472	-	Schottky	30V	140mA	580mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1.5ns	2µA @ 25V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
CRS06(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1A SFLAT	7,866	-	Schottky	20V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	60pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
1SS250(TE85L,F)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 100MA SC59	8,136	-	Standard	200V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	60ns	1µA @ 200V	3pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	125°C (Max)
CUS08F30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 800MA USC	2,502	-	Schottky	30V	800mA	220mV @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	170pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
CUS357,H3F	Toshiba Semiconductor and Storage	SMALL SIGNAL SCHOTTKY BARRIER DI	4,788	-	Schottky	40V	100mA	600mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	11pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS406,H3F	Toshiba Semiconductor and Storage	SMALL SIGNAL SCHOTTKY BARRIER DI	4,878	*	-	-	-	-	-	-	-	-	-	-	-	-
1SS385FV,L3F	Toshiba Semiconductor and Storage	SMALL-SIGNAL SCHOTTKY BARRIER DI	5,562	*	-	-	-	-	-	-	-	-	-	-	-	-
1SS403E,L3F	Toshiba Semiconductor and Storage	SINGLE SWITCHING DIODE 200V 0.1A	3,762	*	-	-	-	-	-	-	-	-	-	-	-	-
1SS322(TE85L,F)	Toshiba Semiconductor and Storage	SMALL-SIGNAL SCHOTTKY BARRIER DI	2,196	*	-	-	-	-	-	-	-	-	-	-	-	-
1SS321,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL SCHOTTKY BARRIER DI	4,338	*	-	-	-	-	-	-	-	-	-	-	-	-
1SS372(TE85L,F)	Toshiba Semiconductor and Storage	SMALL-SIGNAL SCHOTTKY BARRIER DI	2,646	*	-	-	-	-	-	-	-	-	-	-	-	-
1SS385,LF(CT	Toshiba Semiconductor and Storage	SMALL-SIGNAL SCHOTTKY BARRIER DI	3,780	*	-	-	-	-	-	-	-	-	-	-	-	-
1SS422(TE85L,F)	Toshiba Semiconductor and Storage	SMALL-SIGNAL SCHOTTKY BARRIER DI	4,734	*	-	-	-	-	-	-	-	-	-	-	-	-
BAS516,L3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 100V 250MA ESC	7,200	-	Standard	100V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	3ns	200nA @ 80V	0.35pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	150°C (Max)
BAS316,H3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 100V 250MA USC	7,578	-	Standard	100V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	3ns	200nA @ 80V	0.35pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	150°C (Max)
BAS516,H3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 100V 250MA ESC	7,326	-	Standard	100V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	3ns	200nA @ 80V	0.35pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	150°C (Max)
CUS521,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA USC	6,318	-	Schottky	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 30V	26pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS187,LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA S-MINI	7,956	-	Standard	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	125°C (Max)

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