Toshiba Semiconductor and Storage 정류기-싱글
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Toshiba Semiconductor and Storage
기록 225
페이지 1/8
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SC76-2 |
4,303,746 |
|
- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 3pF @ 0V, 1MHz | Surface Mount | SC-76A | SC-76-2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA |
2,283,354 |
|
- | Schottky | 30V | 200mA | 280mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 17pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A USC |
987,474 |
|
- | Schottky | 30V | 1A | 230mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 135pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A SFLAT |
696,738 |
|
- | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | 40pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A SFLAT |
277,764 |
|
- | Schottky | 40V | 1A | 510mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 47pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A SFLAT |
588,168 |
|
- | Schottky | 30V | 1.5A | 460mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 90pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A SFLAT |
1,313,340 |
|
- | Schottky | 30V | 1.5A | 360mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 90pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 1A SFLAT |
1,056,204 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A MFLAT |
606,744 |
|
- | Schottky | 30V | 2A | 370mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | 130pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A MFLAT |
1,738 |
|
- | Schottky | 30V | 3A | 370mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 5A MFLAT |
3,440 |
|
- | Schottky | 30V | 5A | 450mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 30V | 330pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 5A MFLAT |
981,450 |
|
- | Schottky | 30V | 5A | 370mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 30V | 330pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA ESC |
74,880 |
|
- | Schottky | 30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 30V | 26pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SC79 |
77,298 |
|
- | Standard | 80V | 100mA | 1.3V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 10nA @ 80V | 6pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SC-79 | 150°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA CST2 |
358,638 |
|
- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 1.6ns | 500nA @ 80V | 0.5pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2 | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SOD923 |
270,894 |
|
- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 1.6ns | 500nA @ 80V | 0.3pF @ 0V, 1MHz | Surface Mount | SOD-923 | SOD-923 | -55°C ~ 150°C |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA FSC |
86,100 |
|
- | Schottky | 30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 15pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | fSC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA ESC |
69,486 |
|
- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 3pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 10V 100MA SC76 |
67,602 |
|
- | Schottky | 10V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 20µA @ 10V | 40pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | - | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SMINI |
98,802 |
|
- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 3pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 50MA SOD882 |
74,238 |
|
- | Schottky | 20V | 50mA | 550mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 20V | 3.9pF @ 0V, 1MHz | Surface Mount | SOD-882 | SOD-882 | -55°C ~ 125°C |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA CST2 |
216,834 |
|
- | Schottky | 30V | 500mA | 340mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 10V | 55pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2 | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SL2 |
237,690 |
|
- | Schottky | 30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 9.02pF @ 2V, 1MHz | Surface Mount | 0201 (0603 Metric) | SL2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 50MA ESC |
29,460 |
|
- | Schottky | 20V | 50mA | 550mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 20V | 3.9pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA USC |
21,816 |
|
- | Schottky | 30V | 500mA | 470mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | - | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 500MA USC |
122,724 |
|
- | Schottky | 40V | 500mA | 350mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 10V | 42pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 100MA USC |
21,702 |
|
- | Standard | 200V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 60ns | 1µA @ 200V | 3pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A USC |
112,284 |
|
- | Schottky | 40V | 1A | 400mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 40V | 120pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A |
27,228 |
|
- | Schottky | 30V | 1.5A | 400mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
X34 HIGH FREQUENCY SCHOTTKY BARR |
83,082 |
|
- | Schottky | 10V | 10mA (DC) | - | Small Signal =< 200mA (Io), Any Speed | - | 25µA @ 500mV | 0.25pF @ 200mV, 1MHz | Surface Mount | 0201 (0603 Metric) | SL2 | 125°C (Max) |