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Toshiba Semiconductor and Storage 트랜지스터-양극 (BJT)-단일

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카테고리반도체 / 트랜지스터 / 트랜지스터-양극 (BJT)-단일
제조업체Toshiba Semiconductor and Storage
기록 377
페이지 13/13
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
트랜지스터 유형
전류-수집기 (Ic) (최대)
전압-수집기 이미 터 고장 (최대)
Vce 포화 (최대) @ Ib, Ic
전류-수집기 차단 (최대)
DC 전류 이득 (hFE) (최소) @ Ic, Vce
전력-최대
주파수-전환
작동 온도
장착 유형
패키지 / 케이스
공급자 장치 패키지
2SD2257(CANO,A,Q)
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
2,142
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2257(CANO,Q,M)
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
6,426
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2257(Q,M)
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
3,186
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2257,KEHINQ(J
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
3,132
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2257,NIKKIQ(J
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
7,632
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2257,Q(J
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
4,266
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2695(T6CANO,A,F
Toshiba Semiconductor and Storage
TRANS NPN 2A 60V TO226-3
2,034
-
NPN
2A
60V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SD2695(T6CANO,F,M
Toshiba Semiconductor and Storage
TRANS NPN 2A 60V TO226-3
4,158
-
NPN
2A
60V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SD2695(T6CNO,A,F)
Toshiba Semiconductor and Storage
TRANS NPN 2A 60V TO226-3
3,636
-
NPN
2A
60V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SD2695,T6F(J
Toshiba Semiconductor and Storage
TRANS NPN 2A 60V TO226-3
8,028
-
NPN
2A
60V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SD2695,T6F(M
Toshiba Semiconductor and Storage
TRANS NPN 2A 60V TO226-3
3,598
-
NPN
2A
60V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
TTC009,F(J
Toshiba Semiconductor and Storage
TRANS NPN 3A 80V TO220-3
2,664
-
NPN
3A
80V
500mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 5V
2W
150MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
TTC009,F(M
Toshiba Semiconductor and Storage
TRANS NPN 3A 80V TO220-3
7,398
-
NPN
3A
80V
500mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 5V
2W
150MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1020-Y,F(M
Toshiba Semiconductor and Storage
TRANS PNP 2A 50V TO226-3
6,336
-
PNP
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1020-Y,T6NSF(J
Toshiba Semiconductor and Storage
TRANS PNP 2A 50V TO226-3
4,284
-
PNP
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1020-Y,T6WNLF(J
Toshiba Semiconductor and Storage
TRANS PNP 2A 50V TO226-3
3,312
-
PNP
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1721RTE85LF
Toshiba Semiconductor and Storage
TRANS PNP 300V 100MA TO236-3
3,472
-
PNP
100mA
300V
500mV @ 2mA, 20mA
100nA (ICBO)
30 @ 20mA, 10V
150mW
50MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini