Vishay Siliconix 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Vishay Siliconix
기록 3,936
페이지 33/132
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
11,100 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 7A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | 1144pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO220AB |
8,628 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250µA | 330nC @ 10V | ±20V | 14700pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHAN 100 V TO-220 |
7,980 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Tc) | 7.5V, 10V | 3.18mOhm @ 30A, 10V | 4V @ 250µA | 214nC @ 10V | ±20V | 10870pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 15A TO220AB |
18,948 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1640pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 16A D2PAK |
20,208 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68nC @ 10V | ±30V | 1900pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 19.8A POWERPAK |
27,006 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 19.8A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 102nC @ 10V | ±30V | 2396pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO220 |
1,962 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | - | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | - | 1920pF @ 100V | - | - | - | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CHAN 800V TO-220FP |
20,832 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 4V @ 250µA | 88nC @ 10V | ±30V | 1670pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
18,456 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 15A TO220AB |
21,612 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1640pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 26A TO263 |
12,822 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1980pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
12,852 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33nC @ 10V | ±30V | 1085pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V POWERPAK 8X |
26,424 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 100mOhm @ 13.5A, 10V | 5V @ 250µA | 53nC @ 10V | ±30V | 1850pF @ 100V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CHAN 650V 23A POWERPAK |
27,006 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 23A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 116nC @ 10V | ±30V | 2814pF @ 100V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 500V 26A TO-247AC |
10,008 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1980pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-220 |
23,808 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 23A D2PAK |
21,984 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±30V | 2418pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC |
11,364 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 18mOhm @ 44A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 22A TO-247AC |
9,696 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 230mOhm @ 11A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 1938pF @ 100V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 800V 12A TO247AC |
11,172 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 4V @ 250µA | 88nC @ 10V | ±30V | 1670pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-247AC |
7,092 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2030pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-247AC |
8,916 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68nC @ 10V | ±30V | 1900pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 22A TO-220AB |
17,928 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2415pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 21A TO-220AB |
8,028 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106nC @ 10V | ±20V | 2322pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 17A TO-220AB |
22,656 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 120nC @ 10V | ±30V | 2830pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 900V 3.6A TO-247AC |
11,856 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO-220AB |
12,306 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 1851pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC |
11,880 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 18mOhm @ 44A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V D2PAK (TO-2 |
23,640 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 1851pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 12A TO-220 |
20,868 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48nC @ 10V | ±30V | 1375pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |