Vishay Siliconix 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Vishay Siliconix
기록 3,936
페이지 34/132
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 650V 21A TO-247AC |
12,984 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106nC @ 10V | ±30V | 2322pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
15,780 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1562pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 11A TO-247AC |
8,802 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 600mOhm @ 6.6A, 10V | 4V @ 250µA | 84nC @ 10V | ±20V | 1900pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO220AB |
13,716 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 900V 6.7A TO-247AC |
9,612 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 6.7A (Tc) | 10V | 1.6Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 2900pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-220AB |
19,800 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68nC @ 10V | ±30V | 1900pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A TO220AB |
17,064 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A D2PAK |
13,224 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO247AC |
15,132 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO220AB |
22,008 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 250mOhm @ 12A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 2870pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 28A D2PAK |
22,884 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 2714pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 28A FULLPAK220 |
19,164 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 2714pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH TO-220AB |
12,006 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134nC @ 10V | ±30V | 2568pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH TO-220 FULLPAK |
12,774 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134nC @ 10V | ±30V | 2568pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH D2PAK TO-263 |
22,548 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134nC @ 10V | ±30V | 2568pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-247AC |
13,740 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH TO-247AC |
14,640 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134nC @ 10V | ±30V | 2568pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V D2PAK (TO-2 |
14,004 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 2700pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET EF SERIES 600V TO-220 FUL |
20,940 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 2700pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
11,868 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 2700pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 47A TO247AC |
8,568 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220nC @ 10V | ±30V | 9620pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
17,148 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 63A (Tc) | 10V | 39mOhm @ 32A, 10V | 5V @ 250µA | 126nC @ 10V | ±30V | 4369pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 60A TO247AC |
13,380 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 41mOhm @ 35A, 10V | 4V @ 250µA | 410nC @ 10V | ±20V | 5348pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 60A TO247AC |
17,736 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 40mOhm @ 36.5A, 10V | 4V @ 250µA | 394nC @ 10V | ±30V | 5500pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 70A TO-247AD |
11,292 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 250µA | 380nC @ 10V | ±30V | 7500pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 73A TO247AC |
9,684 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362nC @ 10V | ±30V | 7700pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
17,304 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 80A (Tc) | 10V | 32mOhm @ 40A, 10V | 4V @ 250µA | 400nC @ 10V | ±30V | 6600pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 300MA SOT-23 |
4,638,744 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | ±20V | 30pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CHAN 30V SOT23 |
713,358 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta), 5.3A (Tc) | 4.5V, 10V | 33mOhm @ 3A, 10V | 2.5V @ 250µA | 8.9nC @ 10V | ±20V | 288pF @ 15V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 185MA SOT23-3 |
643,050 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 185mA (Ta) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 3V @ 250µA | 1.7nC @ 15V | ±20V | 23pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |